Paper Titles

Characterization of 4H-SiC Epitaxial Layers by Microwave Photoconductivity Decay
p.405

Nonequilibrium Carrier Diffusion and Recombination in Heavily-Doped and Semi-Insulating Bulk HTCVD Grown 4H-SiC Crystals
p.409

Optical Studies of Nonequilibrium Carrier Dynamics in Highly Excited 4H-SiC Epitaxial Layers
p.413

Comparison of Electrically and Optically Determined Minority Carrier Lifetimes in 6H-SiC
p.417

Electrical Characterisation of Heavily Al Doped 4H-SiC Layer Grown by Vapour-Liquid-Solid Epitaxy in Al-Si Melt
p.421

Evaluation of On-State Resistance and Boron-Related Levels in n-Type 4H-SiC
p.425

Effects of Epitaxial Layer Growth Parameters on the Defect Density and on the Electrical Characteristics of Schottky Diodes
p.429

Infrared Gratings Based on SiC/Si-Heterostructures
p.433

Characterisation of 4H-SiC PiN Diodes by Micro-Raman Scattering and Photoemission
p.437

HomeMaterials Science ForumMaterials Science Forum Vols. 483-485Electrical Characterisation of Heavily Al Doped...

Electrical Characterisation of Heavily Al Doped 4H-SiC Layer Grown by Vapour-Liquid-Solid Epitaxy in Al-Si Melt

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Silicon Carbide and Related Materials 2004

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Periodical:

Materials Science Forum (Volumes 483-485)

Pages:

421-424

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.483-485.421

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Online since:

May 2005

Authors:

Philippe Godignon, Christophe Jacquier, Servane Blanqué, Josep Montserrat, Gabriel Ferro, Sylvie Contreras, Marcin Zielinski, Yves Monteil

Keywords:

Hall Measurements, p-Type Doping, VLS, Zener Diode

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© 2005 Trans Tech Publications Ltd. All Rights Reserved

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Citation:

[1] C. Jacquier, G. Ferro, C. Balloud, M. Zielinski, J. Camassel, E.K. Polychroniadis; J. Stoemenos, F. Cauwet and Y. Monteil, Mater. Sci. Forum Vol. 457-460 (2004), pp.735-738

DOI: 10.4028/www.scientific.net/msf.457-460.735

[2] C. Jacquier, G. Ferro, F. Cauwet, D. Chaussende, Y. Monteil, Crystal Growth & Design 3(3) (2003) 285-287

DOI: 10.1021/cg0256069

[3] P. Godignon, X. Jordá, R. Nipoti, G. Cardinali, N. Mestres,, Mater. Sci. Forum, Vol. 389-393 (2002), pp.1317-1320.

DOI: 10.4028/www.scientific.net/msf.389-393.1317