Characterisation of 4H-SiC PiN Diodes by Micro-Raman Scattering and Photoemission

Aurelie Thuaire; Michel Mermoux; Alexandre Crisci; Nicolas Camara; Edwige Bano; Francis Baillet; Etienne Pernot

doi:10.4028/www.scientific.net/MSF.483-485.437

Paper Titles

Electrical Characterisation of Heavily Al Doped 4H-SiC Layer Grown by Vapour-Liquid-Solid Epitaxy in Al-Si Melt
p.421

Evaluation of On-State Resistance and Boron-Related Levels in n-Type 4H-SiC
p.425

Effects of Epitaxial Layer Growth Parameters on the Defect Density and on the Electrical Characteristics of Schottky Diodes
p.429

Infrared Gratings Based on SiC/Si-Heterostructures
p.433

Characterisation of 4H-SiC PiN Diodes by Micro-Raman Scattering and Photoemission
p.437

Hall Effect in the Channel of 3C-SiC MOSFETs
p.441

Photoluminescence Study of In-Situ Rare Earth Doped PVT-Grown SiC Single Crystals
p.445

Excitation Power Dependence of Al-Related Features in the LTPL Spectra of 4H-SiC
p.449

Concentration of N and P in SiC Investigated by Time-Of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS)
p.453

HomeMaterials Science ForumMaterials Science Forum Vols. 483-485Characterisation of 4H-SiC PiN Diodes by...

Characterisation of 4H-SiC PiN Diodes by Micro-Raman Scattering and Photoemission

Abstract:

Structural defects in SiC crystals were investigated and 4H-SiC pin devices were characterized by micro-Raman scattering and photoemission. With the experimental set-up presented, defects could be successfully detected in SiC crystals but stacking faults could not be detected with micro-Raman scattering, although they could be detected by photoemission. Residual stress could be evaluated in 4H-SiC devices, as well as the temperature increase associated with the devices powering. A good correlation was found between the characterization techniques used: micro-Raman scattering and photoemission.

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Silicon Carbide and Related Materials 2004

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Materials Science Forum (Volumes 483-485)

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437-440

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.483-485.437

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Online since:

May 2005

Authors:

Aurelie Thuaire, Michel Mermoux, Alexandre Crisci, Nicolas Camara, Edwige Bano, Francis Baillet, Etienne Pernot

Keywords:

Electroluminescence, PiN Diode, Raman Imaging, Silicon Carbide (SiC), Structural Defects

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