Characterisation of 4H-SiC PiN Diodes by Micro-Raman Scattering and Photoemission

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Structural defects in SiC crystals were investigated and 4H-SiC pin devices were characterized by micro-Raman scattering and photoemission. With the experimental set-up presented, defects could be successfully detected in SiC crystals but stacking faults could not be detected with micro-Raman scattering, although they could be detected by photoemission. Residual stress could be evaluated in 4H-SiC devices, as well as the temperature increase associated with the devices powering. A good correlation was found between the characterization techniques used: micro-Raman scattering and photoemission.

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Periodical:

Materials Science Forum (Volumes 483-485)

Edited by:

Dr. Roberta Nipoti, Antonella Poggi and Andrea Scorzoni

Pages:

437-440

Citation:

A. Thuaire et al., "Characterisation of 4H-SiC PiN Diodes by Micro-Raman Scattering and Photoemission", Materials Science Forum, Vols. 483-485, pp. 437-440, 2005

Online since:

May 2005

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$38.00

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