Characterisation of 4H-SiC PiN Diodes by Micro-Raman Scattering and Photoemission
Structural defects in SiC crystals were investigated and 4H-SiC pin devices were characterized by micro-Raman scattering and photoemission. With the experimental set-up presented, defects could be successfully detected in SiC crystals but stacking faults could not be detected with micro-Raman scattering, although they could be detected by photoemission. Residual stress could be evaluated in 4H-SiC devices, as well as the temperature increase associated with the devices powering. A good correlation was found between the characterization techniques used: micro-Raman scattering and photoemission.
Dr. Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
A. Thuaire et al., "Characterisation of 4H-SiC PiN Diodes by Micro-Raman Scattering and Photoemission", Materials Science Forum, Vols. 483-485, pp. 437-440, 2005