Photoluminescence Study of In-Situ Rare Earth Doped PVT-Grown SiC Single Crystals

Abstract:

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Several SiC bulk crystals were grown with erbium and ytterbium as doping materials. Erbium contents determined by secondary ion mass spectroscopy (SIMS) ranged from 1.2 · 1014 cm-3 to 1.04 · 1015 cm-3, while ytterbium contents were below SIMS detection limit. Photoluminescence (PL) investigations of the characteristic 4f-4f-transition lines revealed a reduced luminescence yield in highly nitrogen and aluminum co-doped samples. Also, samples without intentional co-doping grown on the C-face showed less luminescence intensity than those grown on the Si-face. A stabilizing effect of erbium doping on the 4H polytype was observed.

Info:

Periodical:

Materials Science Forum (Volumes 483-485)

Edited by:

Roberta Nipoti, Antonella Poggi and Andrea Scorzoni

Pages:

445-448

DOI:

10.4028/www.scientific.net/MSF.483-485.445

Citation:

H. Schmitt et al., "Photoluminescence Study of In-Situ Rare Earth Doped PVT-Grown SiC Single Crystals", Materials Science Forum, Vols. 483-485, pp. 445-448, 2005

Online since:

May 2005

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Price:

$35.00

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