Photoluminescence Study of In-Situ Rare Earth Doped PVT-Grown SiC Single Crystals

Holger Schmitt; Ralf Müller; Manfred Maier; Albrecht Winnacker; Peter J. Wellmann

doi:10.4028/www.scientific.net/MSF.483-485.445

Paper Titles

Effects of Epitaxial Layer Growth Parameters on the Defect Density and on the Electrical Characteristics of Schottky Diodes
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Infrared Gratings Based on SiC/Si-Heterostructures
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Characterisation of 4H-SiC PiN Diodes by Micro-Raman Scattering and Photoemission
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Hall Effect in the Channel of 3C-SiC MOSFETs
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Photoluminescence Study of In-Situ Rare Earth Doped PVT-Grown SiC Single Crystals
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Excitation Power Dependence of Al-Related Features in the LTPL Spectra of 4H-SiC
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Concentration of N and P in SiC Investigated by Time-Of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS)
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Materials Characterization and Modeling of SiC in Europe - From the Viewpoint of a Theorist
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A New Model for the D_I-Luminescence in 6H-SiC
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HomeMaterials Science ForumMaterials Science Forum Vols. 483-485Photoluminescence Study of In-Situ Rare Earth...

Photoluminescence Study of In-Situ Rare Earth Doped PVT-Grown SiC Single Crystals

Abstract:

Several SiC bulk crystals were grown with erbium and ytterbium as doping materials. Erbium contents determined by secondary ion mass spectroscopy (SIMS) ranged from 1.2 · 1014 cm-3 to 1.04 · 1015 cm-3, while ytterbium contents were below SIMS detection limit. Photoluminescence (PL) investigations of the characteristic 4f-4f-transition lines revealed a reduced luminescence yield in highly nitrogen and aluminum co-doped samples. Also, samples without intentional co-doping grown on the C-face showed less luminescence intensity than those grown on the Si-face. A stabilizing effect of erbium doping on the 4H polytype was observed.

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Silicon Carbide and Related Materials 2004

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Materials Science Forum (Volumes 483-485)

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445-448

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.483-485.445

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Online since:

May 2005

Authors:

Holger Schmitt, Ralf Müller, Manfred Maier, Albrecht Winnacker, Peter J. Wellmann

Keywords:

Erbium, Photoluminescence (PL), PVT Method, Rare Earth Doping, SiC Bulk Growth

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