Concentration of N and P in SiC Investigated by Time-Of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS)

T. Acartürk; Kurt Semmelroth; Gerhard Pensl; Stephen E. Saddow; Ulrich Starke

doi:10.4028/www.scientific.net/MSF.483-485.453

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HomeMaterials Science ForumMaterials Science Forum Vols. 483-485Concentration of N and P in SiC Investigated by...

Concentration of N and P in SiC Investigated by Time-Of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS)

Abstract:

The concentration of nitrogen and phosphorous in SiC bulk material and epitaxial layers was investigated using time-of-flight secondary ion mass spectrometry (TOF-SIMS). The advantage of TOF-SIMS of acquiring a complete mass spectrum in a single run was used to identify the most sensitive atomic ion or ionic cluster for the selected element to be monitored. For the investigation of N with its intrinsic low ionization yield the use of a Cs containing cluster ion is necessary. Selection of a CNCs2 + cluster allows to reach a detection limit of about cN,min » 5×1016 cm-3. In the case of P the elemental ion was used. However, the adjacent mass of 30SiH influences the P peak as well as its background and has to be suppressed. This can be achieved by limiting the residual gas re-adsorption during the measurement resulting in a detection limit of about cP,min » 5×1015 cm-3. These measurement parameters were used to investigate a single crystal SiC bulk sample grown by the modified Lely method with intentional P doping and an N doped epitaxial SiC layer sample.

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Periodical:

Materials Science Forum (Volumes 483-485)

Pages:

453-456

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.483-485.453

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Online since:

May 2005

Authors:

T. Acartürk, Kurt Semmelroth, Gerhard Pensl, Stephen E. Saddow, Ulrich Starke

Keywords:

Concentration, Depth Profiling, Detection Limits, Dopant, Nitrogen, Phosphorous, Silicon Carbide (SiC), SIMS, ToF-SIMS

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