Observation of Vacancy Clusters in HTCVD Grown SiC

Reino Aavikko; Kimmo Saarinen; Björn Magnusson; Erik Janzén

doi:10.4028/www.scientific.net/MSF.483-485.469

Paper Titles

Excitation Power Dependence of Al-Related Features in the LTPL Spectra of 4H-SiC
p.449

Concentration of N and P in SiC Investigated by Time-Of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS)
p.453

Materials Characterization and Modeling of SiC in Europe - From the Viewpoint of a Theorist
p.457

A New Model for the D_I-Luminescence in 6H-SiC
p.465

Observation of Vacancy Clusters in HTCVD Grown SiC
p.469

Electron Irradiation Induced Vacancy Defects Detected by Positron Annihilation in 6H-SiC
p.473

The V_SiC_Si(Si_CC_Si) Complex in Electron-Irradiated 6H-SiC
p.477

The Role of Nitrogen in the Annealing of Vacancies in 4H-SiC
p.481

Defect Evolution in Ion Irradiated 6H-SiC Epitaxial Layers
p.485

HomeMaterials Science ForumMaterials Science Forum Vols. 483-485Observation of Vacancy Clusters in HTCVD Grown SiC

Observation of Vacancy Clusters in HTCVD Grown SiC

Abstract:

Positron lifetime spectroscopy was used to study defects in semi-insulating (SI) silicon carbide (SiC) substrates grown by high-temperature chemical vapor deposition (HTCVD). The measured positron lifetime spectra can be decomposed into two components, of which the longer corresponds to vacancy clusters. We have carried out atomic superposition calculations to estimate the size of these clusters.

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Silicon Carbide and Related Materials 2004

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Materials Science Forum (Volumes 483-485)

Pages:

469-472

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.483-485.469

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Online since:

May 2005

Authors:

Reino Aavikko, Kimmo Saarinen, Björn Magnusson, Erik Janzén

Keywords:

Atomic Superposition, HTCVD, Positron, Silicon Carbide (SiC), Vacancy Cluster

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