Observation of Vacancy Clusters in HTCVD Grown SiC

Abstract:

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Positron lifetime spectroscopy was used to study defects in semi-insulating (SI) silicon carbide (SiC) substrates grown by high-temperature chemical vapor deposition (HTCVD). The measured positron lifetime spectra can be decomposed into two components, of which the longer corresponds to vacancy clusters. We have carried out atomic superposition calculations to estimate the size of these clusters.

Info:

Periodical:

Materials Science Forum (Volumes 483-485)

Edited by:

Roberta Nipoti, Antonella Poggi and Andrea Scorzoni

Pages:

469-472

DOI:

10.4028/www.scientific.net/MSF.483-485.469

Citation:

R. Aavikko et al., "Observation of Vacancy Clusters in HTCVD Grown SiC", Materials Science Forum, Vols. 483-485, pp. 469-472, 2005

Online since:

May 2005

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Price:

$35.00

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