Observation of Vacancy Clusters in HTCVD Grown SiC
Positron lifetime spectroscopy was used to study defects in semi-insulating (SI) silicon carbide (SiC) substrates grown by high-temperature chemical vapor deposition (HTCVD). The measured positron lifetime spectra can be decomposed into two components, of which the longer corresponds to vacancy clusters. We have carried out atomic superposition calculations to estimate the size of these clusters.
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
R. Aavikko et al., "Observation of Vacancy Clusters in HTCVD Grown SiC", Materials Science Forum, Vols. 483-485, pp. 469-472, 2005