The Role of Nitrogen in the Annealing of Vacancies in 4H-SiC

S. Dannefaer; V. Avalos; Rositza Yakimova

doi:10.4028/www.scientific.net/MSF.483-485.481

Paper Titles

A New Model for the D_I-Luminescence in 6H-SiC
p.465

Observation of Vacancy Clusters in HTCVD Grown SiC
p.469

Electron Irradiation Induced Vacancy Defects Detected by Positron Annihilation in 6H-SiC
p.473

The V_SiC_Si(Si_CC_Si) Complex in Electron-Irradiated 6H-SiC
p.477

The Role of Nitrogen in the Annealing of Vacancies in 4H-SiC
p.481

Defect Evolution in Ion Irradiated 6H-SiC Epitaxial Layers
p.485

High-Temperature Stable Multi-Defect Clusters in Neutron Irradiated Silicon Carbide: Electron Paramagnetic Resonance Study
p.489

Evolution of Defect and Hydrogen-Related Low Temperature Photoluminescence Spectra with Annealing for Hydrogen or Helium Implanted 6H SiC
p.493

M-Center in Low-Dose Proton Implanted 4H-SiC; Bistability and Change in Emission Rate
p.497

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The Role of Nitrogen in the Annealing of Vacancies in 4H-SiC

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Silicon Carbide and Related Materials 2004

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Materials Science Forum (Volumes 483-485)

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481-484

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https://doi.org/10.4028/www.scientific.net/MSF.483-485.481

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Online since:

May 2005

Authors:

S. Dannefaer, V. Avalos, Rositza Yakimova

Keywords:

Nitrogen, Positron Annihilation, Vacancy

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References

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