Evolution of Defect and Hydrogen-Related Low Temperature Photoluminescence Spectra with Annealing for Hydrogen or Helium Implanted 6H SiC

Fei Yan; Robert P. Devaty; Wolfgang J. Choyke; Adam Gali; Frank Schmid; Gerhard Pensl; Günter Wagner

doi:10.4028/www.scientific.net/MSF.483-485.493

Paper Titles

The V_SiC_Si(Si_CC_Si) Complex in Electron-Irradiated 6H-SiC
p.477

The Role of Nitrogen in the Annealing of Vacancies in 4H-SiC
p.481

Defect Evolution in Ion Irradiated 6H-SiC Epitaxial Layers
p.485

High-Temperature Stable Multi-Defect Clusters in Neutron Irradiated Silicon Carbide: Electron Paramagnetic Resonance Study
p.489

Evolution of Defect and Hydrogen-Related Low Temperature Photoluminescence Spectra with Annealing for Hydrogen or Helium Implanted 6H SiC
p.493

M-Center in Low-Dose Proton Implanted 4H-SiC; Bistability and Change in Emission Rate
p.497

Ab Initio Calculation of Shallow Defects: Results for P-Related Donors in SiC
p.501

Probing of the Wave Function of Shallow Donors and Acceptors by EPR in SiC Crystals with Changed Isotopic Composition
p.507

Effective-Mass Theory of Shallow Donors in 4H-SiC
p.511

HomeMaterials Science ForumMaterials Science Forum Vols. 483-485Evolution of Defect and Hydrogen-Related Low...

Evolution of Defect and Hydrogen-Related Low Temperature Photoluminescence Spectra with Annealing for Hydrogen or Helium Implanted 6H SiC

Abstract:

A set of four lightly p-type 6H SiC boule samples was implanted with H or He and annealed in isochronal stages from 950°C to 1500°C. Differences in the hydrogen, DI and DII low temperature photoluminescence spectra are observed and compared. Surprisingly, the hydrogen spectrum appears after a 1300°C anneal in the He implanted samples. A number of unidentified damage lines are also reported.

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Materials Science Forum (Volumes 483-485)

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493-496

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https://doi.org/10.4028/www.scientific.net/MSF.483-485.493

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Online since:

May 2005

Authors:

Fei Yan, Robert P. Devaty, Wolfgang J. Choyke, Adam Gali, Frank Schmid, Gerhard Pensl, Günter Wagner

Keywords:

Defect, D_I, D_II, Helium, Hydrogen, Implantation, Photoluminescence (PL)

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