Materials Characterization and Modeling of SiC in Europe - From the Viewpoint of a Theorist

Abstract:

SiC technology is presently still burdened by a number of problems caused by process- or operation-induced defects. Experimental materials characterization in cooperation with atomistic modeling can be helpful in designing strategies against them. In recent years, considerable theoretical effort has been devoted to clarify the dynamics of defect creation and the mechanisms of dopant (de)activation. The investigation of epitaxial growth and of thermal oxidation has also begun. Here an attempt is made to survey the most important theoretical results of the past four years from Europe.

• Periodical: Materials Science Forum (Volumes 483-485)
• Pages: 457-464
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.483-485.457
• Online since: May 2005
• Authors: Peter Deák
• Keywords: Defect, Dopant, Interface, Theory

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