Excitation Power Dependence of Al-Related Features in the LTPL Spectra of 4H-SiC

Marcin Zielinski; Carole Balloud; Sandrine Juillaguet; Bernard Boyer; Véronique Soulière; Jean Camassel

doi:10.4028/www.scientific.net/MSF.483-485.449

Paper Titles

Infrared Gratings Based on SiC/Si-Heterostructures
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Characterisation of 4H-SiC PiN Diodes by Micro-Raman Scattering and Photoemission
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Hall Effect in the Channel of 3C-SiC MOSFETs
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Photoluminescence Study of In-Situ Rare Earth Doped PVT-Grown SiC Single Crystals
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Excitation Power Dependence of Al-Related Features in the LTPL Spectra of 4H-SiC
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Concentration of N and P in SiC Investigated by Time-Of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS)
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Materials Characterization and Modeling of SiC in Europe - From the Viewpoint of a Theorist
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A New Model for the D_I-Luminescence in 6H-SiC
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Observation of Vacancy Clusters in HTCVD Grown SiC
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HomeMaterials Science ForumMaterials Science Forum Vols. 483-485Excitation Power Dependence of Al-Related Features...

Excitation Power Dependence of Al-Related Features in the LTPL Spectra of 4H-SiC

Abstract:

Recently, a systematic comparison of SIMS measurements with LTPL (Low Temperature Photoluminescence) spectra led us to propose a straightforward empirical calibration of the LTPL intensity versus Al content in 4H-SiC samples. In the present work we analyze the effect of the LTPL excitation power on the intensity of the Al-related features. We examine the influence of the excitation conditions on the calibration curve and determine the limitations of the method.

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Silicon Carbide and Related Materials 2004

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Materials Science Forum (Volumes 483-485)

Pages:

449-452

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.483-485.449

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Online since:

May 2005

Authors:

Marcin Zielinski, Carole Balloud, Sandrine Juillaguet, Bernard Boyer, Véronique Soulière, Jean Camassel

Keywords:

Al Doping, Compensation, Photoluminescence (PL)

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