Hall Effect in the Channel of 3C-SiC MOSFETs

M. Krieger; Gerhard Pensl; Mietek Bakowski; Adolf Schöner; Hiroyuki Nagasawa; Masayuki Abe

doi:10.4028/www.scientific.net/MSF.483-485.441

Paper Titles

Evaluation of On-State Resistance and Boron-Related Levels in n-Type 4H-SiC
p.425

Effects of Epitaxial Layer Growth Parameters on the Defect Density and on the Electrical Characteristics of Schottky Diodes
p.429

Infrared Gratings Based on SiC/Si-Heterostructures
p.433

Characterisation of 4H-SiC PiN Diodes by Micro-Raman Scattering and Photoemission
p.437

Hall Effect in the Channel of 3C-SiC MOSFETs
p.441

Photoluminescence Study of In-Situ Rare Earth Doped PVT-Grown SiC Single Crystals
p.445

Excitation Power Dependence of Al-Related Features in the LTPL Spectra of 4H-SiC
p.449

Concentration of N and P in SiC Investigated by Time-Of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS)
p.453

Materials Characterization and Modeling of SiC in Europe - From the Viewpoint of a Theorist
p.457

HomeMaterials Science ForumMaterials Science Forum Vols. 483-485Hall Effect in the Channel of 3C-SiC MOSFETs

Hall Effect in the Channel of 3C-SiC MOSFETs

Abstract:

Temperature-dependent Hall effect investigations in the channel of lateral 3C-SiC LDDMOSFETs with nitrogen(N)-implanted source/drain regions are conducted. The free electron concentration and the electron Hall mobility are independently determined. A maximum electron Hall mobility of 75 cm2/Vs is observed. The gate oxide withstands electric field strengths up to 5 MV/cm. A high density of interface states of a few 1013 cm-2eV-1 close to the 3C-SiC conduction band edge still lowers the performance of the MOS device.

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Materials Science Forum (Volumes 483-485)

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441-444

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.483-485.441

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Online since:

May 2005

Authors:

M. Krieger, Gerhard Pensl, Mietek Bakowski, Adolf Schöner, Hiroyuki Nagasawa, Masayuki Abe

Keywords:

3C-SiC MOSFET, Density of Interface States, Free Electron Areal Density, Hall-Effect

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