Hall Effect in the Channel of 3C-SiC MOSFETs

Abstract:

Article Preview

Temperature-dependent Hall effect investigations in the channel of lateral 3C-SiC LDDMOSFETs with nitrogen(N)-implanted source/drain regions are conducted. The free electron concentration and the electron Hall mobility are independently determined. A maximum electron Hall mobility of 75 cm2/Vs is observed. The gate oxide withstands electric field strengths up to 5 MV/cm. A high density of interface states of a few 1013 cm-2eV-1 close to the 3C-SiC conduction band edge still lowers the performance of the MOS device.

Info:

Periodical:

Materials Science Forum (Volumes 483-485)

Edited by:

Roberta Nipoti, Antonella Poggi and Andrea Scorzoni

Pages:

441-444

DOI:

10.4028/www.scientific.net/MSF.483-485.441

Citation:

M. Krieger et al., "Hall Effect in the Channel of 3C-SiC MOSFETs", Materials Science Forum, Vols. 483-485, pp. 441-444, 2005

Online since:

May 2005

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.