Room Temperature Steady State and Time Resolved PL Characterization of Ion Irradiation Induced Defects in 6H-SiC

Abstract:

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Photoluminescence (PL) and time resolved PL are well established as important experimental techniques to study electronic properties of SiC. We studied the influence of ionimplantation on the photoluminescence peak at 423nm and the variation of the minority carrier lifetime (MCL).

Info:

Periodical:

Materials Science Forum (Volumes 483-485)

Edited by:

Dr. Roberta Nipoti, Antonella Poggi and Andrea Scorzoni

Pages:

373-376

Citation:

R. Reitano et al., "Room Temperature Steady State and Time Resolved PL Characterization of Ion Irradiation Induced Defects in 6H-SiC", Materials Science Forum, Vols. 483-485, pp. 373-376, 2005

Online since:

May 2005

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$38.00

[1] Evstropov, Yu, Linkov, Morozenko, and Pikus Physica B, 185(1993) pp.313-318.

DOI: https://doi.org/10.1016/b978-0-444-81573-6.50048-7

[2] Kordona, Bergman, Henry and Janzen Appl. Phys. Lett. 66 (2) 1995 pp.189-191.

[3] Bergan, Kordina, Janzen Phys. Stat. Sol. (a) 162, (1997) pp.65-77.

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