Room Temperature Steady State and Time Resolved PL Characterization of Ion Irradiation Induced Defects in 6H-SiC

Ricardo Reitano; M. Zimbone; Paolo Musumeci; P. Baeri

doi:10.4028/www.scientific.net/MSF.483-485.373

Paper Titles

Midgap Levels in As-Grown 4H-SiC Epilayers Investigated by DLTS
p.355

Electronic Levels Induced by Irradiation in 4H-Silicon Carbide
p.359

Capacitance Spectroscopy Study of High Energy Electron Irradiated and Annealed 4H-SiC
p.365

Recombination Enhanced Defect Annealing in 4H-SiC
p.369

Room Temperature Steady State and Time Resolved PL Characterization of Ion Irradiation Induced Defects in 6H-SiC
p.373

Comparative Study of 4H-SiC Irradiated with Neutrons and Heavy Ions
p.377

Optical-Capacitance-Transient Spectroscopy Study for Deep Levels in 4H-SiC Epilayer Grown by Cold Wall Chemical Vapor Deposition
p.381

Direct Experimental Comparison of the Effects of Electron Irradiation on the Charge Carrier Removal Rate in n-Type Silicon and Silicon Carbide
p.385

Study of Ion Induced Damage in 4H-SiC
p.389

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Room Temperature Steady State and Time Resolved PL Characterization of Ion Irradiation Induced Defects in 6H-SiC

Abstract:

Photoluminescence (PL) and time resolved PL are well established as important experimental techniques to study electronic properties of SiC. We studied the influence of ionimplantation on the photoluminescence peak at 423nm and the variation of the minority carrier lifetime (MCL).