Preface
Progress and Limits of the Numerical Simulation of SiC Bulk and Epitaxy Growth Processes
p.3
p.3
Committees
p.4
p.4
Preface
p.6
p.6
Growth of Large Diameter SiC Crystals by Advanced Physical Vapor Transport
p.9
p.9
Crystalline Quality Evaluation of 6H-SiC Bulk Crystals Grown from Si-Ti-C Ternary Solution
p.13
p.13
Growth of 2 Inches 6H-SiC Single Crystals by Sublimation Method: The Comparison of α- and ß-SiC Powders
p.17
p.17
A Study of 6H-Seeded 4H-SiC Bulk Growth by PVT
p.21
p.21
Modified Physical Vapor Transport Growth of SiC - Control of Gas Phase Composition for Improved Process Conditions
p.25
p.25
Committees
Abstract:
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Info:
Periodical:
Materials Science Forum (Volumes 483-485)
Pages:
4-4
Online since:
May 2005
Сopyright:
© 2005 Trans Tech Publications Ltd. All Rights Reserved
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