A Study of 6H-Seeded 4H-SiC Bulk Growth by PVT

Eugene Y. Tupitsyn; Arul Arjunan; Robert T. Bondokov; Robert M. Kennedy; Tangali S. Sudarshan

doi:10.4028/www.scientific.net/MSF.483-485.21

Paper Titles

Preface
p.6

Growth of Large Diameter SiC Crystals by Advanced Physical Vapor Transport
p.9

Crystalline Quality Evaluation of 6H-SiC Bulk Crystals Grown from Si-Ti-C Ternary Solution
p.13

Growth of 2 Inches 6H-SiC Single Crystals by Sublimation Method: The Comparison of α- and ß-SiC Powders
p.17

A Study of 6H-Seeded 4H-SiC Bulk Growth by PVT
p.21

Modified Physical Vapor Transport Growth of SiC - Control of Gas Phase Composition for Improved Process Conditions
p.25

High Al-Doping of SiC Using a Modified PVT (M-PVT) Growth Set-Up
p.31

Growth of Undoped (Vanadium-Free) Semi-Insulating 6H-SiC Single Crystals
p.35

Effect of Nitrogen Doping on the Formation of Planar Defects in 4H-SiC
p.39

HomeMaterials Science ForumMaterials Science Forum Vols. 483-485A Study of 6H-Seeded 4H-SiC Bulk Growth by PVT

A Study of 6H-Seeded 4H-SiC Bulk Growth by PVT

Abstract:

4H-SiC crystals were grown using the seeded sublimation technique (modified Lely technique) in the temperature range of 1950-2200°C. The nucleation of 4H-SiC on 6HSiC has been optimized and 4H-SiC crystals of 1cm thickness were grown using 6H-SiC seeds. a-face and c-face wafers obtained from the grown boules were characterized by KOH etching, X-ray diffraction, and Raman scattering studies. Complete polytypic homogeneity of 4H SiC was obtained during growth and it was found that the 6H to 4H transition occurs in three ways: 1) without a transition layer, 2) with thick 6H-SiC layer growth, and 3) with traces of 3C SiC inclusions. The crown regions of the grown crystals exhibit an X-ray rocking curve width of 21 arcsecs.