Effect of Nitrogen Doping on the Formation of Planar Defects in 4H-SiC

D. Siche; M. Albrecht; J. Doerschel; K. Irmscher; H. J. Rost; M. Rossberg; D. Schulz

doi:10.4028/www.scientific.net/MSF.483-485.39

Paper Titles

A Study of 6H-Seeded 4H-SiC Bulk Growth by PVT
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Modified Physical Vapor Transport Growth of SiC - Control of Gas Phase Composition for Improved Process Conditions
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High Al-Doping of SiC Using a Modified PVT (M-PVT) Growth Set-Up
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Growth of Undoped (Vanadium-Free) Semi-Insulating 6H-SiC Single Crystals
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Effect of Nitrogen Doping on the Formation of Planar Defects in 4H-SiC
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Evolution Roots of Growth-Induced Polytype Domains in 6H-SiC Single Crystals
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SiC Crystal Growth by Sublimation Method with Modification of Crucible and Insulation Felt Design
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Numerical Analysis of Growth Condition on SiC-CVD in the Horizontal Hot-Wall Reactor
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Epitaxial Deposition of Silicon Carbide Films in a Horizontal Hot-Wall CVD Reactor
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HomeMaterials Science ForumMaterials Science Forum Vols. 483-485Effect of Nitrogen Doping on the Formation of...

Effect of Nitrogen Doping on the Formation of Planar Defects in 4H-SiC

Abstract:

Planar defects have been found in nitrogen doped 2" 4H-SiC crystals grown on off-axis seeds. The doping level was 1×1019cm-3, which is below the critical one for the thermally activated cubic stacking fault formation in the 4H matrix. Planar defects in the doped region are nucleated on the whole seed surface outside the growth facet. They are coexisting 15R and 6H lamellas of unitcell height as revealed by means of luminescence and high resolution transmission electron microscopy. These inclusions are preferably formed at the rim of the growth facet, where polytype change occurs after switching off the nitrogen flow during growth.

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Materials Science Forum (Volumes 483-485)

Pages:

39-42

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.483-485.39

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Online since:

May 2005

Authors:

D. Siche, M. Albrecht, J. Doerschel, K. Irmscher, H. J. Rost, M. Rossberg, D. Schulz

Keywords:

4H-SiC, Nitrogen Doping, Planar Defects, Single Crystal Growth

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References

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