Evolution Roots of Growth-Induced Polytype Domains in 6H-SiC Single Crystals

Abstract:

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We present experimental results with regard to the evaluation of growth-induced polytype domains in 6H-SiC crystals grown by sublimation method and these domains are characterized by using the polarized optical microscopy and micro-Raman spectroscopy. The polytype domains of reverse triangular are generated by local variation of temperature along cdirection and spread-wing shapes normally occurred forming micropipes in many cases. These polytype domains may be generated due to the local variation of supersaturation and/or temperature at central position during crystal growth. In this work, we try to elucidate the origin and mechanism responsible for growth-induced polytype domains.

Info:

Periodical:

Materials Science Forum (Volumes 483-485)

Edited by:

Roberta Nipoti, Antonella Poggi and Andrea Scorzoni

Pages:

43-46

DOI:

10.4028/www.scientific.net/MSF.483-485.43

Citation:

S. H. Seo et al., "Evolution Roots of Growth-Induced Polytype Domains in 6H-SiC Single Crystals", Materials Science Forum, Vols. 483-485, pp. 43-46, 2005

Online since:

May 2005

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Price:

$35.00

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