Evolution Roots of Growth-Induced Polytype Domains in 6H-SiC Single Crystals

Soo Hyung Seo; Joon Suk Song; Myung Hwan Oh; Yen Zen Wang

doi:10.4028/www.scientific.net/MSF.483-485.43

Paper Titles

Modified Physical Vapor Transport Growth of SiC - Control of Gas Phase Composition for Improved Process Conditions
p.25

High Al-Doping of SiC Using a Modified PVT (M-PVT) Growth Set-Up
p.31

Growth of Undoped (Vanadium-Free) Semi-Insulating 6H-SiC Single Crystals
p.35

Effect of Nitrogen Doping on the Formation of Planar Defects in 4H-SiC
p.39

Evolution Roots of Growth-Induced Polytype Domains in 6H-SiC Single Crystals
p.43

SiC Crystal Growth by Sublimation Method with Modification of Crucible and Insulation Felt Design
p.47

Numerical Analysis of Growth Condition on SiC-CVD in the Horizontal Hot-Wall Reactor
p.53

Epitaxial Deposition of Silicon Carbide Films in a Horizontal Hot-Wall CVD Reactor
p.57

SiC and III-Nitride Growth in Hot-Wall CVD Reactor
p.61

HomeMaterials Science ForumMaterials Science Forum Vols. 483-485Evolution Roots of Growth-Induced Polytype Domains...

Evolution Roots of Growth-Induced Polytype Domains in 6H-SiC Single Crystals

Abstract:

We present experimental results with regard to the evaluation of growth-induced polytype domains in 6H-SiC crystals grown by sublimation method and these domains are characterized by using the polarized optical microscopy and micro-Raman spectroscopy. The polytype domains of reverse triangular are generated by local variation of temperature along cdirection and spread-wing shapes normally occurred forming micropipes in many cases. These polytype domains may be generated due to the local variation of supersaturation and/or temperature at central position during crystal growth. In this work, we try to elucidate the origin and mechanism responsible for growth-induced polytype domains.

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Silicon Carbide and Related Materials 2004

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Materials Science Forum (Volumes 483-485)

Pages:

43-46

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https://doi.org/10.4028/www.scientific.net/MSF.483-485.43

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Online since:

May 2005

Authors:

Soo Hyung Seo, Joon Suk Song, Myung Hwan Oh, Yen Zen Wang

Keywords:

15R-SiC, 4H-SiC, 6H-SiC, Micropipe, Polytype Domain

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