SiC and III-Nitride Growth in Hot-Wall CVD Reactor

Erik Janzén; Peder Bergman; Örjan Danielsson; Urban Forsberg; Christer Hallin; Jawad Hassan; Anne Henry; Ivan G. Ivanov; A. Kakanakova-Georgieva; P.O.Å. Persson; Qamar-ul Wahab

doi:10.4028/www.scientific.net/MSF.483-485.61

Paper Titles

Evolution Roots of Growth-Induced Polytype Domains in 6H-SiC Single Crystals
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SiC Crystal Growth by Sublimation Method with Modification of Crucible and Insulation Felt Design
p.47

Numerical Analysis of Growth Condition on SiC-CVD in the Horizontal Hot-Wall Reactor
p.53

Epitaxial Deposition of Silicon Carbide Films in a Horizontal Hot-Wall CVD Reactor
p.57

SiC and III-Nitride Growth in Hot-Wall CVD Reactor
p.61

New Achievements on CVD Based Methods for SiC Epitaxial Growth
p.67

Increased Growth Rate in a SiC CVD Reactor Using HCl as a Growth Additive
p.73

High Growth Rate (up to 20 µm/h) SiC Epitaxy in a Horizontal Hot-Wall Reactor
p.77

Homoepitaxial Growth of 4H-SiC Using CH₃Cl Carbon Precursor
p.81

HomeMaterials Science ForumMaterials Science Forum Vols. 483-485SiC and III-Nitride Growth in Hot-Wall CVD Reactor

SiC and III-Nitride Growth in Hot-Wall CVD Reactor

Abstract:

The Hot-Wall CVD reactor was developed for the thick epitaxial SiC layers needed for high voltage power devices but its inherent better properties – better cracking efficiency of the precursor gases and better lateral and vertical temperature homogeneity – should also influence the growth of other materials such as the III-nitrides. We will give some examples of thick SiC layers grown on either off- or on-axis substrates with this technique. We will also show that high-quality III-nitride materials can be grown.

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Silicon Carbide and Related Materials 2004

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Materials Science Forum (Volumes 483-485)

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61-66

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.483-485.61

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Online since:

May 2005

Authors:

Erik Janzén, Peder Bergman, Örjan Danielsson, Urban Forsberg, Christer Hallin, Jawad Hassan, Anne Henry, Ivan G. Ivanov, A. Kakanakova-Georgieva, P.O.Å. Persson, Qamar-ul Wahab

Keywords:

Chemical Vapor Deposition (CVD), DNA Biosensor, Epitaxial Growth, Growth Simulation, High Purity, Hot-Wall CVD, On-Axis, Phosphorus, Silicon Carbide (SiC), Thick Layers

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References

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