SiC and III-Nitride Growth in Hot-Wall CVD Reactor
The Hot-Wall CVD reactor was developed for the thick epitaxial SiC layers needed for high voltage power devices but its inherent better properties – better cracking efficiency of the precursor gases and better lateral and vertical temperature homogeneity – should also influence the growth of other materials such as the III-nitrides. We will give some examples of thick SiC layers grown on either off- or on-axis substrates with this technique. We will also show that high-quality III-nitride materials can be grown.
Dr. Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
E. Janzén et al., "SiC and III-Nitride Growth in Hot-Wall CVD Reactor", Materials Science Forum, Vols. 483-485, pp. 61-66, 2005