SiC and III-Nitride Growth in Hot-Wall CVD Reactor

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The Hot-Wall CVD reactor was developed for the thick epitaxial SiC layers needed for high voltage power devices but its inherent better properties – better cracking efficiency of the precursor gases and better lateral and vertical temperature homogeneity – should also influence the growth of other materials such as the III-nitrides. We will give some examples of thick SiC layers grown on either off- or on-axis substrates with this technique. We will also show that high-quality III-nitride materials can be grown.

Info:

Periodical:

Materials Science Forum (Volumes 483-485)

Edited by:

Dr. Roberta Nipoti, Antonella Poggi and Andrea Scorzoni

Pages:

61-66

DOI:

10.4028/www.scientific.net/MSF.483-485.61

Citation:

E. Janzén et al., "SiC and III-Nitride Growth in Hot-Wall CVD Reactor", Materials Science Forum, Vols. 483-485, pp. 61-66, 2005

Online since:

May 2005

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Price:

$35.00

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