High Growth Rate (up to 20 µm/h) SiC Epitaxy in a Horizontal Hot-Wall Reactor

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Periodical:

Materials Science Forum (Volumes 483-485)

Edited by:

Roberta Nipoti, Antonella Poggi and Andrea Scorzoni

Pages:

77-80

DOI:

10.4028/www.scientific.net/MSF.483-485.77

Citation:

J. Zhang et al., "High Growth Rate (up to 20 µm/h) SiC Epitaxy in a Horizontal Hot-Wall Reactor", Materials Science Forum, Vols. 483-485, pp. 77-80, 2005

Online since:

May 2005

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$35.00

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