Epitaxial Deposition of Silicon Carbide Films in a Horizontal Hot-Wall CVD Reactor
p.57
p.57
SiC and III-Nitride Growth in Hot-Wall CVD Reactor
p.61
p.61
New Achievements on CVD Based Methods for SiC Epitaxial Growth
p.67
p.67
Increased Growth Rate in a SiC CVD Reactor Using HCl as a Growth Additive
p.73
p.73
High Growth Rate (up to 20 µm/h) SiC Epitaxy in a Horizontal Hot-Wall Reactor
p.77
p.77
Homoepitaxial Growth of 4H-SiC Using CH3Cl Carbon Precursor
p.81
p.81
Improved Surface Morphology and Background Doping Concentration in 4H-SiC(000-1) Epitaxial Growth by Hot-Wall CVD
p.85
p.85
4H-SiC Epitaxial Growth on SiC Substrates with Various Off-Angles
p.89
p.89
2-Inch 4H-SiC Homoepitaxial Layer Grown on On-Axis C-Face Substrate by CVD Method
p.93
p.93
High Growth Rate (up to 20 µm/h) SiC Epitaxy in a Horizontal Hot-Wall Reactor
Abstract:
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Periodical:
Materials Science Forum (Volumes 483-485)
Pages:
77-80
Citation:
Online since:
May 2005
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© 2005 Trans Tech Publications Ltd. All Rights Reserved
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