Improved Surface Morphology and Background Doping Concentration in 4H-SiC(000-1) Epitaxial Growth by Hot-Wall CVD

Keiji Wada; Tsunenobu Kimoto; Kimito Nishikawa; Hiroyuki Matsunami

doi:10.4028/www.scientific.net/MSF.483-485.85

Paper Titles

New Achievements on CVD Based Methods for SiC Epitaxial Growth
p.67

Increased Growth Rate in a SiC CVD Reactor Using HCl as a Growth Additive
p.73

High Growth Rate (up to 20 µm/h) SiC Epitaxy in a Horizontal Hot-Wall Reactor
p.77

Homoepitaxial Growth of 4H-SiC Using CH₃Cl Carbon Precursor
p.81

Improved Surface Morphology and Background Doping Concentration in 4H-SiC(000-1) Epitaxial Growth by Hot-Wall CVD
p.85

4H-SiC Epitaxial Growth on SiC Substrates with Various Off-Angles
p.89

2-Inch 4H-SiC Homoepitaxial Layer Grown on On-Axis C-Face Substrate by CVD Method
p.93

Investigation of Basal Plane Dislocations in the 4H-SiC Epilayers Grown on {0001} Substrates
p.97

Epitaxial Growth and Characterisation of Phosphorus Doped SiC Using TBP as Precursor
p.101

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Improved Surface Morphology and Background Doping Concentration in 4H-SiC(000-1) Epitaxial Growth by Hot-Wall CVD

Abstract:

4H-SiC layers have been homoepitaxially grown on off-axis 4H-SiC(000-1) under various conditions by horizontal hot-wall CVD. Improvement of surface morphology and reduction of background doping concentration have been achieved. Surface morphology grown on the (000-1) C face strongly depends on the C/Si ratio at 1500 °C, and hillock-like surface defects can be eliminate by increasing growth temperature to 1600 °C. Site-competition behavior is clearly observed under low-pressure growth conditions even on the (000-1) C face. The lowest doping concentration has been determined to be 6.0x1014 cm-3. A trial of high-speed growth on the (000-1) C face and deep level analysis are also discussed.