Epitaxial Growth and Characterisation of Phosphorus Doped SiC Using TBP as Precursor
The phosphorus incorporation into SiC epilayer is studied when varying the CVD process growth parameters and the results are compared with thermodynamical calculations. Photoluminescence spectra are also presented.
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
A. Henry and E. Janzén, "Epitaxial Growth and Characterisation of Phosphorus Doped SiC Using TBP as Precursor", Materials Science Forum, Vols. 483-485, pp. 101-104, 2005