Epitaxial Growth and Characterisation of Phosphorus Doped SiC Using TBP as Precursor

Abstract:

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The phosphorus incorporation into SiC epilayer is studied when varying the CVD process growth parameters and the results are compared with thermodynamical calculations. Photoluminescence spectra are also presented.

Info:

Periodical:

Materials Science Forum (Volumes 483-485)

Edited by:

Roberta Nipoti, Antonella Poggi and Andrea Scorzoni

Pages:

101-104

DOI:

10.4028/www.scientific.net/MSF.483-485.101

Citation:

A. Henry and E. Janzén, "Epitaxial Growth and Characterisation of Phosphorus Doped SiC Using TBP as Precursor", Materials Science Forum, Vols. 483-485, pp. 101-104, 2005

Online since:

May 2005

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Price:

$35.00

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