CVD Growth and Characterization of 4H-SiC Epitaxial Film on (11-20) As-Cut Substrates
Thick epilayers up to 60 µm have been grown on ) 0 2 11 ( face SiC substrates at a growth rate of 15 µm/hr by chemical vapor deposition (CVD). The epilayer surface is extremely smooth with a RMS roughness of 0.6 nm for a 20µm×20µm area. Threading screw and edge dislocations parallel to the c-axis are present in the ) 0 2 11 ( substrate; however, they do not propagate into the epilayer. The I-V characteristics of the Schottky diodes on this face were studied. Basal plane (0001) dislocations with a density of ~105 cm-2 were found in the ) 0 2 11 ( epilayers by molten KOH etching and electron beam induced current (EBIC) mode of the scanning electron microscope (SEM).
Dr. Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Z. H. Zhang et al., "CVD Growth and Characterization of 4H-SiC Epitaxial Film on (11-20) As-Cut Substrates", Materials Science Forum, Vols. 483-485, pp. 113-116, 2005