CVD Growth and Characterization of 4H-SiC Epitaxial Film on (11-20) As-Cut Substrates

Ze Hong Zhang; Ying Gao; Arul Arjunan; Eugene Toupitsyn; Priyamvada Sadagopan; Robert M. Kennedy; Tangali S. Sudarshan

doi:10.4028/www.scientific.net/MSF.483-485.113

Paper Titles

Investigation of Basal Plane Dislocations in the 4H-SiC Epilayers Grown on {0001} Substrates
p.97

Epitaxial Growth and Characterisation of Phosphorus Doped SiC Using TBP as Precursor
p.101

Experimental Investigation and Simulation of Silicon Droplets Formation during SiC CVD Epitaxial Growth
p.105

Structural Improvement of Seeds for Bulk Crystal Growth by Using Hot-Wall CVD of 4H-SiC
p.109

CVD Growth and Characterization of 4H-SiC Epitaxial Film on (11-20) As-Cut Substrates
p.113

Evaluation of p-Type Doping for (1,1,-2,0) Epitaxial Layers Grown on α-Cut (1,1,-2,0) 4H-SiC Substrates
p.117

Aluminium Doping of 4H-SiC Grown with HexaMethylDiSilane
p.121

Is the Al Solubility Limit in SiC Temperature Dependent or not?
p.125

Homoepitaxial Growth on 4H-SiC (03-38) Face by Sublimation Close Space Technique
p.129

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CVD Growth and Characterization of 4H-SiC Epitaxial Film on (11-20) As-Cut Substrates

Abstract:

Thick epilayers up to 60 µm have been grown on ) 0 2 11 ( face SiC substrates at a growth rate of 15 µm/hr by chemical vapor deposition (CVD). The epilayer surface is extremely smooth with a RMS roughness of 0.6 nm for a 20µm×20µm area. Threading screw and edge dislocations parallel to the c-axis are present in the ) 0 2 11 ( substrate; however, they do not propagate into the epilayer. The I-V characteristics of the Schottky diodes on this face were studied. Basal plane (0001) dislocations with a density of ~105 cm-2 were found in the ) 0 2 11 ( epilayers by molten KOH etching and electron beam induced current (EBIC) mode of the scanning electron microscope (SEM).