Homoepitaxial Growth on 4H-SiC (03-38) Face by Sublimation Close Space Technique

S. Yoneda; Tomoaki Furusho; H. Takagi; S. Ohta; Shigehiro Nishino

doi:10.4028/www.scientific.net/MSF.483-485.129

Paper Titles

CVD Growth and Characterization of 4H-SiC Epitaxial Film on (11-20) As-Cut Substrates
p.113

Evaluation of p-Type Doping for (1,1,-2,0) Epitaxial Layers Grown on α-Cut (1,1,-2,0) 4H-SiC Substrates
p.117

Aluminium Doping of 4H-SiC Grown with HexaMethylDiSilane
p.121

Is the Al Solubility Limit in SiC Temperature Dependent or not?
p.125

Homoepitaxial Growth on 4H-SiC (03-38) Face by Sublimation Close Space Technique
p.129

LPE of Silicon Carbide Using Diluted Si-Ge Flux
p.133

Large Area SiC Epitaxial Layer Growth in a Warm-Wall Planetary VPE Reactor
p.137

Epitaxial Growth of n-Type 4H-SiC on 3" Wafers for Power Devices
p.141

Epitaxial Overgrowth of 4H-SiC for Devices with p-Buried Floating Junction Structure
p.147

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Homoepitaxial Growth on 4H-SiC (03-38) Face by Sublimation Close Space Technique

Abstract:

For preliminary step toward fabrication of MOSFET using 4H-SiC 8) 3 (03 prepared by sublimation method, epitaxial growth of device quality 4H-SiC on 4H-SiC (0001) 8.0° off substrate was carried out and investigated. Smooth and specular surface of 4H-SiC (0001) plane was obtained by optimum growth condition. And epitaxial growth on 4H-SiC 8) 3 (03 and ) 8 3 (03 substrates were carried out with optimum growth conditions of 4H-SiC (0001). Smooth and specular surface was obtained on 4H-SiC 8) 3 (03 and ) 8 3 (03 plane. Growth rate of epilayers of 4H-SiC (0001), 8) 3 (03 and ) 8 3 (03 face were same. Oxidation rate of 4H-SiC (0001), ) 1 (000 , 8) 3 (03 and ) 8 3 (03 face was investigated. The oxidation rate was different depending on the faces. It was observed that the difference of oxidation rate of 8) 3 (03 and ) 8 3 (03 is mainly due to the difference of polarity similar to the case of reported for (0001) and ) 1 (000 .