Homoepitaxial Growth on 4H-SiC (03-38) Face by Sublimation Close Space Technique

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For preliminary step toward fabrication of MOSFET using 4H-SiC 8) 3 (03 prepared by sublimation method, epitaxial growth of device quality 4H-SiC on 4H-SiC (0001) 8.0° off substrate was carried out and investigated. Smooth and specular surface of 4H-SiC (0001) plane was obtained by optimum growth condition. And epitaxial growth on 4H-SiC 8) 3 (03 and ) 8 3 (03 substrates were carried out with optimum growth conditions of 4H-SiC (0001). Smooth and specular surface was obtained on 4H-SiC 8) 3 (03 and ) 8 3 (03 plane. Growth rate of epilayers of 4H-SiC (0001), 8) 3 (03 and ) 8 3 (03 face were same. Oxidation rate of 4H-SiC (0001), ) 1 (000 , 8) 3 (03 and ) 8 3 (03 face was investigated. The oxidation rate was different depending on the faces. It was observed that the difference of oxidation rate of 8) 3 (03 and ) 8 3 (03 is mainly due to the difference of polarity similar to the case of reported for (0001) and ) 1 (000 .

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Periodical:

Materials Science Forum (Volumes 483-485)

Edited by:

Dr. Roberta Nipoti, Antonella Poggi and Andrea Scorzoni

Pages:

129-132

Citation:

S. Yoneda et al., "Homoepitaxial Growth on 4H-SiC (03-38) Face by Sublimation Close Space Technique", Materials Science Forum, Vols. 483-485, pp. 129-132, 2005

Online since:

May 2005

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$38.00

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