Epitaxial Overgrowth of 4H-SiC for Devices with p-Buried Floating Junction Structure

Abstract:

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The epitaxial overgrowth process was examined with a view to realizing the p-buried floating junction structure. The growth condition was investigated to reduce the p-type impurity contamination and to minimize the auto-doping. Total p-type impurity concentration was reduced to 1/50 of the n-type carrier concentration of the drift layers. The buried p-type floating structure was realized for the first time, using 4H-SiC material.

Info:

Periodical:

Materials Science Forum (Volumes 483-485)

Edited by:

Roberta Nipoti, Antonella Poggi and Andrea Scorzoni

Pages:

147-150

DOI:

10.4028/www.scientific.net/MSF.483-485.147

Citation:

J. Nishio et al., "Epitaxial Overgrowth of 4H-SiC for Devices with p-Buried Floating Junction Structure", Materials Science Forum, Vols. 483-485, pp. 147-150, 2005

Online since:

May 2005

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Price:

$35.00

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