Homoepitaxial Growth on 4H-SiC (03-38) Face by Sublimation Close Space Technique
p.129
p.129
LPE of Silicon Carbide Using Diluted Si-Ge Flux
p.133
p.133
Large Area SiC Epitaxial Layer Growth in a Warm-Wall Planetary VPE Reactor
p.137
p.137
Epitaxial Growth of n-Type 4H-SiC on 3" Wafers for Power Devices
p.141
p.141
Epitaxial Overgrowth of 4H-SiC for Devices with p-Buried Floating Junction Structure
p.147
p.147
Reduction of Stacking Faults in Fast Epitaxial Growth of 4H-SiC and its Impacts on High-Voltage Schottky Diodes
p.151
p.151
Development of Epitaxial SiC Processes Suitable for Bipolar Power Devices
p.155
p.155
Characteristics of Trench-Refilled 4H-SiC P-N Junction Diodes Fabricated by Selective Epitaxial Growth
p.159
p.159
Molecular Beam Epitaxy of Semiconductor Nanostructures Based on SiC
p.163
p.163
Epitaxial Overgrowth of 4H-SiC for Devices with p-Buried Floating Junction Structure
Abstract:
The epitaxial overgrowth process was examined with a view to realizing the p-buried floating junction structure. The growth condition was investigated to reduce the p-type impurity contamination and to minimize the auto-doping. Total p-type impurity concentration was reduced to 1/50 of the n-type carrier concentration of the drift layers. The buried p-type floating structure was realized for the first time, using 4H-SiC material.
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Periodical:
Materials Science Forum (Volumes 483-485)
Pages:
147-150
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Online since:
May 2005
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© 2005 Trans Tech Publications Ltd. All Rights Reserved
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