Epitaxial Overgrowth of 4H-SiC for Devices with p-Buried Floating Junction Structure

Johji Nishio; Chiharu Ota; Takashi Shinohe; Kazutoshi Kojima; Hajime Okumura

doi:10.4028/www.scientific.net/MSF.483-485.147

Paper Titles

Homoepitaxial Growth on 4H-SiC (03-38) Face by Sublimation Close Space Technique
p.129

LPE of Silicon Carbide Using Diluted Si-Ge Flux
p.133

Large Area SiC Epitaxial Layer Growth in a Warm-Wall Planetary VPE Reactor
p.137

Epitaxial Growth of n-Type 4H-SiC on 3" Wafers for Power Devices
p.141

Epitaxial Overgrowth of 4H-SiC for Devices with p-Buried Floating Junction Structure
p.147

Reduction of Stacking Faults in Fast Epitaxial Growth of 4H-SiC and its Impacts on High-Voltage Schottky Diodes
p.151

Development of Epitaxial SiC Processes Suitable for Bipolar Power Devices
p.155

Characteristics of Trench-Refilled 4H-SiC P-N Junction Diodes Fabricated by Selective Epitaxial Growth
p.159

Molecular Beam Epitaxy of Semiconductor Nanostructures Based on SiC
p.163

HomeMaterials Science ForumMaterials Science Forum Vols. 483-485Epitaxial Overgrowth of 4H-SiC for Devices with...

Epitaxial Overgrowth of 4H-SiC for Devices with p-Buried Floating Junction Structure

Abstract:

The epitaxial overgrowth process was examined with a view to realizing the p-buried floating junction structure. The growth condition was investigated to reduce the p-type impurity contamination and to minimize the auto-doping. Total p-type impurity concentration was reduced to 1/50 of the n-type carrier concentration of the drift layers. The buried p-type floating structure was realized for the first time, using 4H-SiC material.

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Silicon Carbide and Related Materials 2004

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Materials Science Forum (Volumes 483-485)

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147-150

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https://doi.org/10.4028/www.scientific.net/MSF.483-485.147

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Online since:

May 2005

Authors:

Johji Nishio, Chiharu Ota, Takashi Shinohe, Kazutoshi Kojima, Hajime Okumura

Keywords:

Floating Junction, Impurity, Overgrowth

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