Molecular Beam Epitaxy of Semiconductor Nanostructures Based on SiC

Abstract:

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The different aspects of molecular beam epitaxy (MBE) for producing two-dimensional (Quantum well), one-dimensional (Quantum wire and rod), and zero-dimensional (Quantum dot) structures based on SiC for functional applications are discussed. Development and implementation of a suitable MBE growth procedure for fabrication of heteropolytypic layer sequences are demonstrated in context with thermodynamic considerations. Furthermore, the growth of onedimensional structures based on cubic wires and nanorod arrays, also grown on Si(111), is shown. Moreover, the perspectives of quantum dot structures and a novel way to form 3C-SiC-dot structures within α-SiC has been discussed.

Info:

Periodical:

Materials Science Forum (Volumes 483-485)

Edited by:

Roberta Nipoti, Antonella Poggi and Andrea Scorzoni

Pages:

163-168

DOI:

10.4028/www.scientific.net/MSF.483-485.163

Citation:

A. Fissel "Molecular Beam Epitaxy of Semiconductor Nanostructures Based on SiC", Materials Science Forum, Vols. 483-485, pp. 163-168, 2005

Online since:

May 2005

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$35.00

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