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Growth of 3C-(Si_1-xC_1-y)Ge_x+y Layers on 4H-SiC by Molecular Beam Epitaxy
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Lateral Epitaxial Overgrowth of 3C-SiC on Si Substrates by CVD Method
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Suppression Mechanism of Double Positioning Growth in 3C-SiC(111) Crystal by Using an Off-Axis Si(110) Substrate
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HomeMaterials Science ForumMaterials Science Forum Vols. 483-485Molecular Beam Epitaxy of Semiconductor...

Molecular Beam Epitaxy of Semiconductor Nanostructures Based on SiC

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Abstract:

The different aspects of molecular beam epitaxy (MBE) for producing two-dimensional (Quantum well), one-dimensional (Quantum wire and rod), and zero-dimensional (Quantum dot) structures based on SiC for functional applications are discussed. Development and implementation of a suitable MBE growth procedure for fabrication of heteropolytypic layer sequences are demonstrated in context with thermodynamic considerations. Furthermore, the growth of onedimensional structures based on cubic wires and nanorod arrays, also grown on Si(111), is shown. Moreover, the perspectives of quantum dot structures and a novel way to form 3C-SiC-dot structures within α-SiC has been discussed.

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Silicon Carbide and Related Materials 2004

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Periodical:

Materials Science Forum (Volumes 483-485)

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163-168

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https://doi.org/10.4028/www.scientific.net/MSF.483-485.163

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Online since:

May 2005

Authors:

Andreas Fissel

Keywords:

Molecular Beam Epitaxy, Quantum Dot (QD), Quantum Well, Quantum Wire

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© 2005 Trans Tech Publications Ltd. All Rights Reserved

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