Lateral Epitaxial Overgrowth of 3C-SiC on Si Substrates by CVD Method
Lateral epitaxial overgrowth (LEO) is known as method of defects reduction for GaN. LEO is expected to reduce crystal defects on hetero-epitaxial growth of 3C-SiC. (100) Si substrate patterned with SiO2 mask was used as the substrate. Before CVD process, V shape crater was made on Si surface by HCl etching. And growth condition of CVD was optimized. Single crystal of 3C-SiC was grown laterally on SiO2 layer. Cross-sectional transmission electron microscopic observation indicated that crystal quality of LEO region was single and no defect crystal.
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
S. Sugishita et al., "Lateral Epitaxial Overgrowth of 3C-SiC on Si Substrates by CVD Method", Materials Science Forum, Vols. 483-485, pp. 177-180, 2005