Lateral Epitaxial Overgrowth of 3C-SiC on Si Substrates by CVD Method

Abstract:

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Lateral epitaxial overgrowth (LEO) is known as method of defects reduction for GaN. LEO is expected to reduce crystal defects on hetero-epitaxial growth of 3C-SiC. (100) Si substrate patterned with SiO2 mask was used as the substrate. Before CVD process, V shape crater was made on Si surface by HCl etching. And growth condition of CVD was optimized. Single crystal of 3C-SiC was grown laterally on SiO2 layer. Cross-sectional transmission electron microscopic observation indicated that crystal quality of LEO region was single and no defect crystal.

Info:

Periodical:

Materials Science Forum (Volumes 483-485)

Edited by:

Roberta Nipoti, Antonella Poggi and Andrea Scorzoni

Pages:

177-180

DOI:

10.4028/www.scientific.net/MSF.483-485.177

Citation:

S. Sugishita et al., "Lateral Epitaxial Overgrowth of 3C-SiC on Si Substrates by CVD Method", Materials Science Forum, Vols. 483-485, pp. 177-180, 2005

Online since:

May 2005

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Price:

$35.00

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