Lateral Epitaxial Overgrowth of 3C-SiC on Si Substrates by CVD Method

S. Sugishita; A. Shoji; Yoshihiko Mukai; Taro Nishiguchi; K. Michikami; Toshiyuki Isshiki; Satoru Ohshima; Shigehiro Nishino

doi:10.4028/www.scientific.net/MSF.483-485.177

Paper Titles

Characteristics of Trench-Refilled 4H-SiC P-N Junction Diodes Fabricated by Selective Epitaxial Growth
p.159

Molecular Beam Epitaxy of Semiconductor Nanostructures Based on SiC
p.163

Computer Simulation of the Early Stages of Nano Scale SiC Growth on Si
p.169

Growth of 3C-(Si_1-xC_1-y)Ge_x+y Layers on 4H-SiC by Molecular Beam Epitaxy
p.173

Lateral Epitaxial Overgrowth of 3C-SiC on Si Substrates by CVD Method
p.177

Suppression Mechanism of Double Positioning Growth in 3C-SiC(111) Crystal by Using an Off-Axis Si(110) Substrate
p.181

Influence of Substrate Roughness on the Formation of Defects in 3C-SiC Grown on Si(110) Substrate by Hetero-Epitaxial CVD Method
p.185

Planar Defects, Voids and their Relationship in 3C-SiC Layers
p.189

Suppression of the Twin Formation in CVD Growth of (111) 3C-SiC on (110) Si Substrate
p.193

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Lateral Epitaxial Overgrowth of 3C-SiC on Si Substrates by CVD Method

Abstract:

Lateral epitaxial overgrowth (LEO) is known as method of defects reduction for GaN. LEO is expected to reduce crystal defects on hetero-epitaxial growth of 3C-SiC. (100) Si substrate patterned with SiO2 mask was used as the substrate. Before CVD process, V shape crater was made on Si surface by HCl etching. And growth condition of CVD was optimized. Single crystal of 3C-SiC was grown laterally on SiO2 layer. Cross-sectional transmission electron microscopic observation indicated that crystal quality of LEO region was single and no defect crystal.