Suppression of the Twin Formation in CVD Growth of (111) 3C-SiC on (110) Si Substrate
Chemical vapor deposition of (111) 3C-SiC on (110) Si substrate was carried out, and the effect of the substrate off-axis introduced on (110) Si substrate for suppressing the twin formation in 3C-SiC hetero-epitaxial layers was investigated. From the growth on hemispherically polished (110) Si substrate, it was found that the off-axis toward the  Si axis had a noble effect for suppressing the twin formation, while the off-axis toward the  Si axis was ineffective. The growth of single 3C-SiC crystal containing few double positioning boundaries, which are related with the twin formation, was demonstrated on the (110) Si substrate 3° off-axis toward the  Si axis. Transmission electron microscopic observation revealed that double positioning boundaries on the (110) Si substrate off-axis toward the  Si axis were nearly eliminated within the initial a few hundreds nano meter in thickness.
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
T. Nishiguchi et al., "Suppression of the Twin Formation in CVD Growth of (111) 3C-SiC on (110) Si Substrate", Materials Science Forum, Vols. 483-485, pp. 193-196, 2005