Suppression of the Twin Formation in CVD Growth of (111) 3C-SiC on (110) Si Substrate

Abstract:

Chemical vapor deposition of (111) 3C-SiC on (110) Si substrate was carried out, and the effect of the substrate off-axis introduced on (110) Si substrate for suppressing the twin formation in 3C-SiC hetero-epitaxial layers was investigated. From the growth on hemispherically polished (110) Si substrate, it was found that the off-axis toward the [001] Si axis had a noble effect for suppressing the twin formation, while the off-axis toward the [110] Si axis was ineffective. The growth of single 3C-SiC crystal containing few double positioning boundaries, which are related with the twin formation, was demonstrated on the (110) Si substrate 3° off-axis toward the [001] Si axis. Transmission electron microscopic observation revealed that double positioning boundaries on the (110) Si substrate off-axis toward the [001] Si axis were nearly eliminated within the initial a few hundreds nano meter in thickness.

• Periodical: Materials Science Forum (Volumes 483-485)
• Pages: 193-196
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.483-485.193
• Online since: May 2005
• Authors: Taro Nishiguchi, Mitsutaka Nakamura, Koji Nishio, Toshiyuki Isshiki, Satoru Ohshima, Shigehiro Nishino
• Keywords: (110), 3C-SiC, Chemical Vapor Deposition (CVD), Heteroepitaxy, Off-Axis, Twin

References

[1] T. Nishiguchi,Y. Mukai, S. Ohshima, and S. Nishino, phys. stat. sol. (c) Vol. 0 (2003), p.2585.

[2] T. Nishiguchi, M. Nakamura, K. Nishio, T. Isshiki, and S. Nishino, Appl. Phys. Lett. Vol. 84 (2003), p.3082.

[3] M. Nakamura, T. Nishiguchi, K. Nishio, T. Isshiki, S. Ohshima, and S. Nishino, in this volume. Figure 3. Cross-sectional dark field TEM image at the interface between 3C-SiC and the (110) Si substrate 3° off-axis toward the.

DOI: 10.4028/www.scientific.net/msf.483-485.181

[1] Si axis, which is taken along the.

[110] Si axis. The arrow-heads indicate the interface between 3C-SiC and Si substrate.