Influence of Substrate Roughness on the Formation of Defects in 3C-SiC Grown on Si(110) Substrate by Hetero-Epitaxial CVD Method

Toshiyuki Isshiki; Mitsutaka Nakamura; Taro Nishiguchi; Koji Nishio; Satoru Ohshima; Shigehiro Nishino

doi:10.4028/www.scientific.net/MSF.483-485.185

Paper Titles

Computer Simulation of the Early Stages of Nano Scale SiC Growth on Si
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Growth of 3C-(Si_1-xC_1-y)Ge_x+y Layers on 4H-SiC by Molecular Beam Epitaxy
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Lateral Epitaxial Overgrowth of 3C-SiC on Si Substrates by CVD Method
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Suppression Mechanism of Double Positioning Growth in 3C-SiC(111) Crystal by Using an Off-Axis Si(110) Substrate
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Influence of Substrate Roughness on the Formation of Defects in 3C-SiC Grown on Si(110) Substrate by Hetero-Epitaxial CVD Method
p.185

Planar Defects, Voids and their Relationship in 3C-SiC Layers
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Suppression of the Twin Formation in CVD Growth of (111) 3C-SiC on (110) Si Substrate
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Regrowth of 3C-SiC on CMP Treated 3C-SiC/Si Epitaxial Layers
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Low Temperature Chemical Vapor Deposition of 3C-SiC on Si Substrates
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HomeMaterials Science ForumMaterials Science Forum Vols. 483-485Influence of Substrate Roughness on the Formation...

Influence of Substrate Roughness on the Formation of Defects in 3C-SiC Grown on Si(110) Substrate by Hetero-Epitaxial CVD Method

Abstract:

Interfaces between a Si(110) substrate and 3C-SiC crystals grown hetero-epitaxially by CVD were investigated by cross-sectional transmission electron microscopy. Gas flow condition during the carbonization process affects the roughness of the substrate surface and there is an optimum condition to preserve the flat surface. High quality 3C-SiC crystals grew only on the flat substrate, with crystallographic relationship of Si[1-10]//SiC[1-10] and Si[001]//SiC[1-1 - 2], because the well-lattice-match relationship was limited in a two-dimensional region at the SiC(111)/Si(110) interface. Using the optimum condition, some kinds of roughness at an atomic scale remained on the surface of the substrate. Nanoscopic observation of the crystals grown on an off-axis substrate revealed the influence of the roughness on the epitaxial growth and the defects generation at the interface.

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Silicon Carbide and Related Materials 2004

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Materials Science Forum (Volumes 483-485)

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185-188

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.483-485.185

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Online since:

May 2005

Authors:

Toshiyuki Isshiki, Mitsutaka Nakamura, Taro Nishiguchi, Koji Nishio, Satoru Ohshima, Shigehiro Nishino

Keywords:

3C-SiC, Hetero-Epitaxial CVD Growth, High Resolution Transmission Electron Microscopy, Substrate Roughness

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References

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