Key Radicals for Hetero-Epitaxial Growth of 3C-SiC on Silicon Substrates

Hideki Shimizu; Kensaku Hisada; Yosuke Aoyama

doi:10.4028/www.scientific.net/MSF.483-485.209

Paper Titles

Suppression of the Twin Formation in CVD Growth of (111) 3C-SiC on (110) Si Substrate
p.193

Regrowth of 3C-SiC on CMP Treated 3C-SiC/Si Epitaxial Layers
p.197

Low Temperature Chemical Vapor Deposition of 3C-SiC on Si Substrates
p.201

Challenge to 200 mm 3C-SiC Wafers Using SOI
p.205

Key Radicals for Hetero-Epitaxial Growth of 3C-SiC on Silicon Substrates
p.209

Nucleation Control in FLASIC Assisted Short Time Liquid Phase Epitaxy by Melt Modification
p.213

A Thermal Model for Flash Lamp Annealing of 3C-SiC/Si Multi-Layer Systems (i-FLASiC)
p.217

Microstructures in the Pendeo Epitaxial Layer of 3C-SiC on Si Substrate
p.221

Large Area DPB Free (111) β-SiC Thick Layer Grown on (0001) α-SiC Nominal Surfaces by the CF-PVT Method
p.225

HomeMaterials Science ForumMaterials Science Forum Vols. 483-485Key Radicals for Hetero-Epitaxial Growth of 3C-SiC...

Key Radicals for Hetero-Epitaxial Growth of 3C-SiC on Silicon Substrates

Abstract:

Effects of the flow rate of C3H8 passed through hydrogen plasma on deposition rates and^microstructures of 3C-SiC films on Si (100) substrate were investigated by a reflection electron diffraction, an X-ray diffraction and an ellipsometric measurement. The deposition rate of the films increased independently of the flow rate of C3H8 with increasing the flow rate of SiH4. The films grown with increasing the flow rate of C3H8 kept single crystalline structure even at high flow rate of SiH4. Hydrogen radicals generated from C3H8 decomposition by plasma increase with increasing the flow rate of C3H8, and play important rolls to keep epitaxial growth.

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2004

View Preview

Info:

Periodical:

Materials Science Forum (Volumes 483-485)

Pages:

209-212

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.483-485.209

Citation:

Cite this paper

Online since:

May 2005

Authors:

Hideki Shimizu, Kensaku Hisada, Yosuke Aoyama

Keywords:

3C-SiC/Si, Heteroepitaxial Growth, Hydrogen Radical, Plasma-Assisted CVD, X-Ray Diffraction (XRD)

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] H. Shimizu, Inst. Phys. Conf. Ser. 142, 161 (1996).

Google Scholar

[2] S. Nishino, J. A. Powell, and H. A. Will, Appl. Phys. Lett. 42, 460 (1983).

Google Scholar

[3] H. Shimizu, T. Ohba and K. Hisada, Materials Science Forum, Vols. 389-393 (2002) pp.335-338.

Google Scholar

[4] H. Shimizu and K. Hisada, Materials Science Forum, Vols. 433-446 (2003) pp.229-232 Fig. 4. Changes in the deposition rates as a function of SiH4 flow rate, at different flow rate of C3H8.

Google Scholar