Key Radicals for Hetero-Epitaxial Growth of 3C-SiC on Silicon Substrates

Abstract:

Article Preview

Effects of the flow rate of C3H8 passed through hydrogen plasma on deposition rates and^microstructures of 3C-SiC films on Si (100) substrate were investigated by a reflection electron diffraction, an X-ray diffraction and an ellipsometric measurement. The deposition rate of the films increased independently of the flow rate of C3H8 with increasing the flow rate of SiH4. The films grown with increasing the flow rate of C3H8 kept single crystalline structure even at high flow rate of SiH4. Hydrogen radicals generated from C3H8 decomposition by plasma increase with increasing the flow rate of C3H8, and play important rolls to keep epitaxial growth.

Info:

Periodical:

Materials Science Forum (Volumes 483-485)

Edited by:

Roberta Nipoti, Antonella Poggi and Andrea Scorzoni

Pages:

209-212

DOI:

10.4028/www.scientific.net/MSF.483-485.209

Citation:

H. Shimizu et al., "Key Radicals for Hetero-Epitaxial Growth of 3C-SiC on Silicon Substrates", Materials Science Forum, Vols. 483-485, pp. 209-212, 2005

Online since:

May 2005

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.