Large Area SiC Epitaxial Layer Growth in a Warm-Wall Planetary VPE Reactor

Abstract:

Experimental results are presented for SiC epitaxial layer growths employing a largearea, 7x3-inch, warm-wall planetary SiC-VPE reactor. This high-throughput reactor has been optimized for the growth of uniform 0.01 to 30-micron thick, specular, device-quality SiC epitaxial layers with background doping concentrations of <1x1014 cm-3. Multi-layer device profiles such as Schottky, MESFETs, SITs, and BJTs with n-type doping from ~1x1015 cm-3 to >1x1019 cm-3, p-type doping from ~3x1015 cm-3 to >1x1020 cm-3, and abrupt doping transitions (~1 decade/nm) are regularly grown in continuous growth runs. Intrawafer layer thickness and n-type doping uniformities of <1% and <5% s/mean have been achieved. Within a run, wafer-to-wafer thickness and doping variation are ~±1% and ~±5% respectively. Long term run-to-run variations while under process control are approximately ~3% s/mean for thickness and ~5% s/mean for doping. Latest results from an even larger 6x4-inch (100-mm) reactor are also presented.

• Periodical: Materials Science Forum (Volumes 483-485)
• Pages: 137-140
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.483-485.137
• Online since: May 2005
• Authors: Albert A. Burk, Michael J. O'Loughlin, Michael J. Paisley, Adrian R. Powell, M.F. Brady, Stephan G. Müller, S.T. Allen
• Keywords: Planetary, SiC Epitaxy, Warm-Wall

References

[1] H. Morkoç, S. Strite, G. B. Gao, M. E. Lin, B. Sverdlov, and M. Burns, J. Appl. Phys., 76, 1363 (1994).

[2] J. W. Milligan, S.T. Allen, J. J. Sumakeris, A. R. Powell, J. R. Jenny, and J. W. Palmour, GaAs MANTECH Conference Digest of Papers, Scottsdale, Az. (2003).

[3] R. R. Siergiej, S. Sriram, R. C. Clarke, A. K. Agarwal, C. D. Brandt, A. A. Burk, Jr., T. J. Smith, A. Morse, and P. A. Orphanos, Tech. Digest Int. Conf. SiC and Rel. Mat'95, (Kyoto, Japan 1995), p.321.

DOI: 10.1109/drc.1995.496290

[4] A. Agarwal, Sei-Hyung Ryu, C. Capell, J. Richmond, J. Palmour, H. Bartlow, P. Chow, S. Scozzie, W. Tipton, S. Baynes and K. Jones, Silicon Carbide and Related Materials 2003, Materials Science Forum Vols. 457-460 (2004) p.1141.

DOI: 10.4028/www.scientific.net/msf.457-460.1141

[5] Cree, Inc. 4600 Silicon Drive, Durham NC, 27703.

[6] M. Treu, R. Rupp, H. Brunner, F. Dahlquist and Ch. Hecht, Silicon Carbide and Related Materials 2003, Materials Science Forum Vols. 457-460 (2004) p.981.

DOI: 10.4028/www.scientific.net/msf.457-460.981

[7] P. M. Frijlink, J. Crystal Growth, 93, 207 (1988).

[8] P. M. Frijlink, J. L. Nicolas and P. Suchet, J. Crystal Growth, 107, 166 (1991).

[9] Aixtron Inc. Kackerstr. 15-17, D-52072 Aachen, Germany.

[10] R. Rupp, A. Wiedenhofer, D. Stephani, Mat. Sci. and Enginneering, B61-62 (1999), p.125.

[11] A. A. Burk, Jr., M. J. O'Loughlin, and H. D. Nordby, Jr., J. Crystal Growth, Vol. 200 (1999), p.458.

[12] M. J. O'Loughlin, H. D. Nordby, Jr., and A. A. Burk, Jr., Mat. Res. Soc. Symp. Proc. Vol 572 (1999), p.161.

[13] B. Thomas, W. Bartsch, R. Stein, R. Schörner and D. Stephani, Silicon Carbide and Related Materials 2003, Materials Science Forum Vols. 457-460 (2004) p.181.

DOI: 10.4028/www.scientific.net/msf.457-460.181

[14] T. Kimoto, A. Itoh, H. Akita, T. Urushidani, S. Jang, and H. Matsunami, Compound Semiconductors (1994), p.437. Fig. 5 RF Power map for 1 mm FETs sampled from a 3-inch wafer indicating 4 W/mm cw with >50% PAE at 3 GHz (VDS=50 V, IDQ=50 mA).