Aluminium Doping of 4H-SiC Grown with HexaMethylDiSilane

C. Sartel; Véronique Soulière; Marcin Zielinski; Yves Monteil; Jean Camassel; S. Rushworth

doi:10.4028/www.scientific.net/MSF.483-485.121

Paper Titles

Experimental Investigation and Simulation of Silicon Droplets Formation during SiC CVD Epitaxial Growth
p.105

Structural Improvement of Seeds for Bulk Crystal Growth by Using Hot-Wall CVD of 4H-SiC
p.109

CVD Growth and Characterization of 4H-SiC Epitaxial Film on (11-20) As-Cut Substrates
p.113

Evaluation of p-Type Doping for (1,1,-2,0) Epitaxial Layers Grown on α-Cut (1,1,-2,0) 4H-SiC Substrates
p.117

Aluminium Doping of 4H-SiC Grown with HexaMethylDiSilane
p.121

Is the Al Solubility Limit in SiC Temperature Dependent or not?
p.125

Homoepitaxial Growth on 4H-SiC (03-38) Face by Sublimation Close Space Technique
p.129

LPE of Silicon Carbide Using Diluted Si-Ge Flux
p.133

Large Area SiC Epitaxial Layer Growth in a Warm-Wall Planetary VPE Reactor
p.137

HomeMaterials Science ForumMaterials Science Forum Vols. 483-485Aluminium Doping of 4H-SiC Grown with...

Aluminium Doping of 4H-SiC Grown with HexaMethylDiSilane

Abstract:

We report on the study of the p-type doping of 4H-SiC material using HexaMethylDiSilane/TriMethylAluminium/Propane (HMDS/TMA/P) system in place of the usual Silane/TriMethylAluminium/Propane (S/TMA/P) precursors. The influence of growth parameters such as TMA flow, growth rate or C/Si ratio is investigated. The aluminium incorporation level is deduced from both by C(V) (mercury probe) and SIMS measurements. The presence of aluminium in the layers is confirmed by non-destructive optical micro-Raman experiments. Good quality p-type, aluminium doped 4H-SiC layers can be grown using HMDS/TMA/P system. The amount of aluminium in the layers can be controlled by choosing the growth conditions and an aluminium concentration as high as 2x1019 at.cm-3 has been reached.Finally, comparing the two HMDS/TMA/P and S/TMA/P systems, no difference in aluminium incorporation has been found.