Structural Improvement of Seeds for Bulk Crystal Growth by Using Hot-Wall CVD of 4H-SiC

Günter Wagner; D. Schulz; J. Doerschel

doi:10.4028/www.scientific.net/MSF.483-485.109

Paper Titles

2-Inch 4H-SiC Homoepitaxial Layer Grown on On-Axis C-Face Substrate by CVD Method
p.93

Investigation of Basal Plane Dislocations in the 4H-SiC Epilayers Grown on {0001} Substrates
p.97

Epitaxial Growth and Characterisation of Phosphorus Doped SiC Using TBP as Precursor
p.101

Experimental Investigation and Simulation of Silicon Droplets Formation during SiC CVD Epitaxial Growth
p.105

Structural Improvement of Seeds for Bulk Crystal Growth by Using Hot-Wall CVD of 4H-SiC
p.109

CVD Growth and Characterization of 4H-SiC Epitaxial Film on (11-20) As-Cut Substrates
p.113

Evaluation of p-Type Doping for (1,1,-2,0) Epitaxial Layers Grown on α-Cut (1,1,-2,0) 4H-SiC Substrates
p.117

Aluminium Doping of 4H-SiC Grown with HexaMethylDiSilane
p.121

Is the Al Solubility Limit in SiC Temperature Dependent or not?
p.125

HomeMaterials Science ForumMaterials Science Forum Vols. 483-485Structural Improvement of Seeds for Bulk Crystal...

Structural Improvement of Seeds for Bulk Crystal Growth by Using Hot-Wall CVD of 4H-SiC

Abstract:

Growth of 4H-SiC epitaxial layers has been performed in a horizontal hot-wall CVD (chemical vapor deposition) reactor using the silane-propane-hydrogen system. Two inch 4H-SiC, C-face wafers with an off-cut angle of about 7° towards <11 2 0> direction have been used as substrates. Micropipe dissociation has been investigated by varying the carbon-silicon (C/Si) ratio in the source gas atmosphere. Depending on the C/Si ratio the micropipes propagate into the layer without changing their image (C/Si > 1) or they dissociate in separate dislocations leaving a scar like formed surface region (C/Si £ 1). The substrates including epitaxial layers of reduced micropipe density were used as seeds for bulk crystal growth. If a micropipe is once closed in an epilayer grown at a low C/Si ratio, it is not opened in the subsequent growth process at high temperature.

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Materials Science Forum (Volumes 483-485)

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109-112

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https://doi.org/10.4028/www.scientific.net/MSF.483-485.109

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Online since:

May 2005

Authors:

Günter Wagner, D. Schulz, J. Doerschel

Keywords:

4H-SiC, Epitaxial Growth, Micropipe Closing, Sublimation Growth

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