High Al-Doping of SiC Using a Modified PVT (M-PVT) Growth Set-Up

Ralf Müller; Ulrike Künecke; Roland Weingärtner; Holger Schmitt; Patrick Desperrier; Peter J. Wellmann

doi:10.4028/www.scientific.net/MSF.483-485.31

Paper Titles

Crystalline Quality Evaluation of 6H-SiC Bulk Crystals Grown from Si-Ti-C Ternary Solution
p.13

Growth of 2 Inches 6H-SiC Single Crystals by Sublimation Method: The Comparison of α- and ß-SiC Powders
p.17

A Study of 6H-Seeded 4H-SiC Bulk Growth by PVT
p.21

Modified Physical Vapor Transport Growth of SiC - Control of Gas Phase Composition for Improved Process Conditions
p.25

High Al-Doping of SiC Using a Modified PVT (M-PVT) Growth Set-Up
p.31

Growth of Undoped (Vanadium-Free) Semi-Insulating 6H-SiC Single Crystals
p.35

Effect of Nitrogen Doping on the Formation of Planar Defects in 4H-SiC
p.39

Evolution Roots of Growth-Induced Polytype Domains in 6H-SiC Single Crystals
p.43

SiC Crystal Growth by Sublimation Method with Modification of Crucible and Insulation Felt Design
p.47

HomeMaterials Science ForumMaterials Science Forum Vols. 483-485High Al-Doping of SiC Using a Modified PVT (M-PVT)...

High Al-Doping of SiC Using a Modified PVT (M-PVT) Growth Set-Up

Abstract:

Several highly aluminum doped SiC bulk crystals were grown with a modified PVT (MPVT) method. To facilitate 4H-SiC formation, growth was conducted on the C-face. The samples were investigated using Hall measurements in the Van-der-Pauw geometry. Lowest room temperature values for specific resistivities were 0.09 Ωcm for 6H-SiC and 0.2 Ωcm for 4H-SiC, which are to our knowledge the lowest values yet reported in literature. Thus, resistivity values of < 0.2 Ωcm, which are required for substrates in high power device applications, could be demonstrated for 4HSiC. Remarkably, in very highly doped samples the type of conduction could not be determined by Hall measurements.

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Silicon Carbide and Related Materials 2004

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Materials Science Forum (Volumes 483-485)

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31-34

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.483-485.31

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Online since:

May 2005

Authors:

Ralf Müller, Ulrike Künecke, Roland Weingärtner, Holger Schmitt, Patrick Desperrier, Peter J. Wellmann

Keywords:

4H-SiC, 6H-SiC, Al-Doping, Hall-Effect, p-Type, PVT Method, SiC Bulk Growth

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