Growth of 2 Inches 6H-SiC Single Crystals by Sublimation Method: The Comparison of α- and ß-SiC Powders

Soo Hyung Seo; Joon Suk Song; Myung Hwan Oh; Yen Zen Wang

doi:10.4028/www.scientific.net/MSF.483-485.17

Paper Titles

Committees
p.4

Preface
p.6

Growth of Large Diameter SiC Crystals by Advanced Physical Vapor Transport
p.9

Crystalline Quality Evaluation of 6H-SiC Bulk Crystals Grown from Si-Ti-C Ternary Solution
p.13

Growth of 2 Inches 6H-SiC Single Crystals by Sublimation Method: The Comparison of α- and ß-SiC Powders
p.17

A Study of 6H-Seeded 4H-SiC Bulk Growth by PVT
p.21

Modified Physical Vapor Transport Growth of SiC - Control of Gas Phase Composition for Improved Process Conditions
p.25

High Al-Doping of SiC Using a Modified PVT (M-PVT) Growth Set-Up
p.31

Growth of Undoped (Vanadium-Free) Semi-Insulating 6H-SiC Single Crystals
p.35

HomeMaterials Science ForumMaterials Science Forum Vols. 483-485Growth of 2 Inches 6H-SiC Single Crystals by...

Growth of 2 Inches 6H-SiC Single Crystals by Sublimation Method: The Comparison of α- and ß-SiC Powders

Abstract:

We examined the formation of poly-crystals and polytypes under the point of view applying various powder phases. 6H-SiC single crystal was easily grown by using the green (α-SiC) powder, while the poly-crystals were generated when β-SiC powder was utilized. The method of mixed β-SiC and carbon powder and of graphite pipe inserted in β-SiC powder were applied to overcome the generation of poly-crystals, respectively. It was confirmed that the occurrence of poly-crystals in 6H-SiC crystal was successfully suppressed by C-rich environment.