The Reactive Neutral Beam Etching of SiC and its Application in p-n Junction Periphery Protection

G. Sarov; T. Cholakova; Roumen Kakanakov

doi:10.4028/www.scientific.net/MSF.483-485.769

Paper Titles

Step Structures Produced by Hydrogen Etching of Initially Step-Free (0001) 4H-SiC Mesas
p.753

Reduction of Fluoride Species and Surface Roughness by H₂ Gas Addition in SiC Dry Etching
p.757

Structure and Morphology of 4H-SiC Wafer Surfaces after H₂-Etching
p.761

Reactive Ion Etching Induced Surface Damage of Silicon Carbide
p.765

The Reactive Neutral Beam Etching of SiC and its Application in p-n Junction Periphery Protection
p.769

Forward-Bias Degradation in 4H-SiC p⁺nn⁺ Diodes: Influence of the Mesa Etching
p.773

Trench Formation on Ion Implanted SiC Surfaces after Thermal Oxidation
p.777

Metal Bonding in SiC Based Substrates
p.781

SiC Power Device Packaging Technologies for 300 to 350°C Applications
p.785

HomeMaterials Science ForumMaterials Science Forum Vols. 483-485The Reactive Neutral Beam Etching of SiC and its...

The Reactive Neutral Beam Etching of SiC and its Application in p-n Junction Periphery Protection

Abstract:

This paper presents much more details on the process of etching n and p type SiC using a dc saddle field source. Here is described a method for stabilizing the dc discharge by adding controlled flow of O2 to SF6 in the source chamber. This kind of etching is used to fabricate 4H-SiC p-i-n diodes with a junction periphery protection. The effect of the junction periphery protection, the source power that terminates the etching process and testing environment on the breakdown voltage are investigated. The optimised p-i-n diodes exhibit a stable reverse bias operation with a breakdown voltage of 1700 V.