The Reactive Neutral Beam Etching of SiC and its Application in p-n Junction Periphery Protection

Abstract:

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This paper presents much more details on the process of etching n and p type SiC using a dc saddle field source. Here is described a method for stabilizing the dc discharge by adding controlled flow of O2 to SF6 in the source chamber. This kind of etching is used to fabricate 4H-SiC p-i-n diodes with a junction periphery protection. The effect of the junction periphery protection, the source power that terminates the etching process and testing environment on the breakdown voltage are investigated. The optimised p-i-n diodes exhibit a stable reverse bias operation with a breakdown voltage of 1700 V.

Info:

Periodical:

Materials Science Forum (Volumes 483-485)

Edited by:

Dr. Roberta Nipoti, Antonella Poggi and Andrea Scorzoni

Pages:

769-772

DOI:

10.4028/www.scientific.net/MSF.483-485.769

Citation:

G. Sarov et al., "The Reactive Neutral Beam Etching of SiC and its Application in p-n Junction Periphery Protection", Materials Science Forum, Vols. 483-485, pp. 769-772, 2005

Online since:

May 2005

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Price:

$35.00

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