Step Structures Produced by Hydrogen Etching of Initially Step-Free (0001) 4H-SiC Mesas

J. Anthony Powell; Philip G. Neudeck; Andrew J. Trunek; Phillip B. Abel

doi:10.4028/www.scientific.net/MSF.483-485.753

Paper Titles

Ni-Silicide Contacts to 6H-SiC: Contact Resistivity and Barrier Height on Ion Implanted n-Type and Barrier Height on p-Type Epilayer
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Nucleation and Reaction of Ag on 4H-SiC(0001)
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Characterization of Electrical Contacts on Polycrystalline 3C-SiC Thin Films
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Effect of the Metal Composition on the Electrical and Thermal Properties of Au/Pd/Ti/Pd Contacts to p-Type SiC
p.749

Step Structures Produced by Hydrogen Etching of Initially Step-Free (0001) 4H-SiC Mesas
p.753

Reduction of Fluoride Species and Surface Roughness by H₂ Gas Addition in SiC Dry Etching
p.757

Structure and Morphology of 4H-SiC Wafer Surfaces after H₂-Etching
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Reactive Ion Etching Induced Surface Damage of Silicon Carbide
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The Reactive Neutral Beam Etching of SiC and its Application in p-n Junction Periphery Protection
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Step Structures Produced by Hydrogen Etching of Initially Step-Free (0001) 4H-SiC Mesas

Abstract:

This paper presents new observations resulting from in-situ high temperature hydrogen etching of 4H-SiC mesas that were step-free prior to initiation of etching. In particular, it was found that well-ordered pyramidal-shaped step train structures could be produced on mesa top surfaces via stepflow etching proceeding inward from the sides of mesas. In many cases, the height of steps etched inward from {112 0} mesa sides is 0.5 nm (2 Si-C bilayers), while the height of steps etched inward from {11 00} sides of the same mesa is 1.0 nm (4 Si-C bilayers, the repeat distance of the 4H-SiC polytype). We propose that stepflow etching starting from the mesa sidewall and involving step-to-step repulsive forces produces the observed step train structures.

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Silicon Carbide and Related Materials 2004

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Materials Science Forum (Volumes 483-485)

Pages:

753-756

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.483-485.753

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Online since:

May 2005

Authors:

J. Anthony Powell, Philip G. Neudeck, Andrew J. Trunek, Phillip B. Abel

Keywords:

4H-SiC, Atomic Force Microscope (AFM), Hydrogen Etching, Stepflow Etching, Step-Free Surface

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