Characterization of Electrical Contacts on Polycrystalline 3C-SiC Thin Films

Antonio Castaldini; Anna Cavallini; Marco Rossi; M. Cocuzza; Carlo Ricciardi

doi:10.4028/www.scientific.net/MSF.483-485.745

Paper Titles

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Nucleation and Reaction of Ag on 4H-SiC(0001)
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Reduction of Fluoride Species and Surface Roughness by H₂ Gas Addition in SiC Dry Etching
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Structure and Morphology of 4H-SiC Wafer Surfaces after H₂-Etching
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HomeMaterials Science ForumMaterials Science Forum Vols. 483-485Characterization of Electrical Contacts on...

Characterization of Electrical Contacts on Polycrystalline 3C-SiC Thin Films

Abstract:

We report on the investigation of electrical properties of polycrystalline 3C-SiC thin films deposited on oxidized Si by low pressure chemical vapor deposition (LPCVD) to obtain bi-layer structures [Si(100)/SiO2/poly 3C-SiC] for pressure sensors and micro-electromechanical system (MEMS) applications. Polycrystalline 3C-SiC films have been preliminary characterized in their compositional, structural, morphological and electrical properties. Moreover, metal contact definition has been carefully optimized by transmission line method (TLM) analyses performed at different temperatures. We focuses the attention on the evaluation of the bulk resistivity (ρ), the specific contact resistivity (ρc) and their behavior dependence on the temperature because these are the characteristics of major importance for the fabrication of pressure sensors or MEMS.

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Silicon Carbide and Related Materials 2004

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Materials Science Forum (Volumes 483-485)

Pages:

745-748

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.483-485.745

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Online since:

May 2005

Authors:

Antonio Castaldini, Anna Cavallini, Marco Rossi, M. Cocuzza, Carlo Ricciardi

Keywords:

Atomic Force Microscope (AFM), Cubic 3C(Beta)-SiC, Low Pressure Chemical Vapor Deposition LPCVD, Specific Contact Resistivity, Surface Photovoltage Spectroscopy SPS, Transfer Length (L_T), Transmission Line Method TLM

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