Phase Formation at Rapid Thermal Annealing of Nickel Contacts on C-Face n-Type 4H-SiC

Sergio Ferrero; A. Albonico; Umberto M. Meotto; G. Rambolà; Samuele Porro; Fabrizio Giorgis; Denis Perrone; Luciano Scaltrito; E. Bontempi; L.E. Depero; G. Richieri; Luigi Merlin

doi:10.4028/www.scientific.net/MSF.483-485.733

Paper Titles

Characterization of Polyimide Dielectric Layer for the Passivation of High Electric Field and High Temperature Silicon Carbide Power Devices
p.717

Improvement in Electrical Performance of Schottky Contacts for High-Voltage Diode
p.721

Surface Preparation of 6H-SiC Substrates by Electron Beam Annealing
p.725

Ion-Beam Induced Modifications of Titanium Schottky Barrier on 4H-SiC
p.729

Phase Formation at Rapid Thermal Annealing of Nickel Contacts on C-Face n-Type 4H-SiC
p.733

Ni-Silicide Contacts to 6H-SiC: Contact Resistivity and Barrier Height on Ion Implanted n-Type and Barrier Height on p-Type Epilayer
p.737

Nucleation and Reaction of Ag on 4H-SiC(0001)
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Characterization of Electrical Contacts on Polycrystalline 3C-SiC Thin Films
p.745

Effect of the Metal Composition on the Electrical and Thermal Properties of Au/Pd/Ti/Pd Contacts to p-Type SiC
p.749

HomeMaterials Science ForumMaterials Science Forum Vols. 483-485Phase Formation at Rapid Thermal Annealing of...

Phase Formation at Rapid Thermal Annealing of Nickel Contacts on C-Face n-Type 4H-SiC

Abstract:

In this work we report an analysis on Ni/4H-SiC interfaces aimed at optimizing the ohmic contacts. Several thermal cycles have been performed by rapid thermal annealing checking the possible chemical reactions at the metal semiconductor interfaces. Micro x-ray diffraction and micro Raman techniques have been performed in order to study the interface micro structural evolution. Inter diffusion of each element at the Ni - SiC interface was examined using Auger spectroscopy. Electrical measurements have been performed in order to check the ohmic behavior of the contacts. Finally, a correlation between microstructures evolution and electrical behaviors is reported.