Improvement in Electrical Performance of Schottky Contacts for High-Voltage Diode

Abstract:

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We investigated the effect of high temperature annealing on the Schottky barrier height (Fb) and the ideality factor (n-factor) of a Mo contact. In a Mo contact, the Fb increased and the leakage current decreased by annealing at 600oC, while no increase in n-factor and forward excess current owing to the high temperature annealing was observed. The Schottky barrier diode with Mo contact annealed at 600oC showed a blocking-voltage (Vb) of 4.15 kV and a specific on resistance (Ron) of 9.07 mWcm2, achieving a high Vb 2/Ron value of 1898 MW/cm2.

Info:

Periodical:

Materials Science Forum (Volumes 483-485)

Edited by:

Dr. Roberta Nipoti, Antonella Poggi and Andrea Scorzoni

Pages:

721-724

DOI:

10.4028/www.scientific.net/MSF.483-485.721

Citation:

T. Nakamura et al., "Improvement in Electrical Performance of Schottky Contacts for High-Voltage Diode", Materials Science Forum, Vols. 483-485, pp. 721-724, 2005

Online since:

May 2005

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$35.00

[1] M. Bhatnagar and B. J. Baliga: IEEE trans. Electron Dev. Vol. 40 no. 3 (1993), p.645.

[2] www. infineon. com.

[3] www. cree. com.

[4] A. Itoh and H. Matsunami: Phys. Stat. Sol. (a) Vol. 162 (1997), p.389.

[5] T. Hatakeyama and T. Shinohe: Mater. Sci. Forum Vol. 389-393 (2002), p.1169.

[6] H. Tsuchida, I. Kamata, T. Jikimoto, and K. Izumi: J. Cryst. Growth Vol. 237-239 (2002) p.1206.

[7] H. Saitoh, T. Kimoto, and H. Matsunami: Mater. Sci. Forum Vol. 457-460 (2004), p.997.

[8] Y. Negoro, K. Katsumoto, T. Kimoto, and H. Matsunami: Mater. Sci. Forum Vol. 457-460 (2004), p.933.

[9] R. Singh, J. A. Cooper, Jr., M. R. Melloch, T. P. Chow, and J. W. Palmour: IEEE Trans. Electron Dev. Vol. 49 no. 4 (2002), p.665.

[10] J. H. Zhao, P. Alexandrov, and X. Li: IEEE Electron Dev. Lett. Vol. 24 no. 6 (2003), p.402.

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