Improvement in Electrical Performance of Schottky Contacts for High-Voltage Diode

Tomonori Nakamura; Toshiyuki Miyanagi; Hidekazu Tsuchida; Isaho Kamata; Tamotsu Jikimoto; Kunikaza Izumi

doi:10.4028/www.scientific.net/MSF.483-485.721

Paper Titles

Electrical Properties of Aluminium Oxide Films Grown by Atomic Layer Deposition on n-Type 4H-SiC
p.705

Characterization of 4H-SiC MOS Structures with Al₂O₃ as Gate Dielectric
p.709

4H-SiC MOSFETs Using Thermal Oxidized Ta₂Si Films as High-k Gate Dielectric
p.713

Characterization of Polyimide Dielectric Layer for the Passivation of High Electric Field and High Temperature Silicon Carbide Power Devices
p.717

Improvement in Electrical Performance of Schottky Contacts for High-Voltage Diode
p.721

Surface Preparation of 6H-SiC Substrates by Electron Beam Annealing
p.725

Ion-Beam Induced Modifications of Titanium Schottky Barrier on 4H-SiC
p.729

Phase Formation at Rapid Thermal Annealing of Nickel Contacts on C-Face n-Type 4H-SiC
p.733

Ni-Silicide Contacts to 6H-SiC: Contact Resistivity and Barrier Height on Ion Implanted n-Type and Barrier Height on p-Type Epilayer
p.737

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Improvement in Electrical Performance of Schottky Contacts for High-Voltage Diode

Abstract:

We investigated the effect of high temperature annealing on the Schottky barrier height (Fb) and the ideality factor (n-factor) of a Mo contact. In a Mo contact, the Fb increased and the leakage current decreased by annealing at 600oC, while no increase in n-factor and forward excess current owing to the high temperature annealing was observed. The Schottky barrier diode with Mo contact annealed at 600oC showed a blocking-voltage (Vb) of 4.15 kV and a specific on resistance (Ron) of 9.07 mWcm2, achieving a high Vb 2/Ron value of 1898 MW/cm2.