Characterization of 4H-SiC MOS Structures with Al2O3 as Gate Dielectric

A. Paskaleva; R.R Ciechonski; Mikael Syväjärvi; E. Atanassova; Rositza Yakimova

doi:10.4028/www.scientific.net/MSF.483-485.709

Paper Titles

Low Density of Interface States in n-Type 4H-SiC MOS Capacitors Achieved by Nitrogen Implantation
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Effects of N₂O Anneal on Channel Mobility of 4H-SiC MOSFET and Gate Oxide Reliability
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Characterization of Aluminium and Titanium Oxides Deposited on 4H-SiC by Atomic Layer Deposition Technique
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Electrical Properties of Aluminium Oxide Films Grown by Atomic Layer Deposition on n-Type 4H-SiC
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Characterization of 4H-SiC MOS Structures with Al₂O₃ as Gate Dielectric
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4H-SiC MOSFETs Using Thermal Oxidized Ta₂Si Films as High-k Gate Dielectric
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Characterization of Polyimide Dielectric Layer for the Passivation of High Electric Field and High Temperature Silicon Carbide Power Devices
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Improvement in Electrical Performance of Schottky Contacts for High-Voltage Diode
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Surface Preparation of 6H-SiC Substrates by Electron Beam Annealing
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HomeMaterials Science ForumMaterials Science Forum Vols. 483-485Characterization of 4H-SiC MOS Structures with...

Characterization of 4H-SiC MOS Structures with Al₂O₃ as Gate Dielectric

Abstract:

The electrical properties of Al2O3 as a gate dielectric in MOS structures based on n- and p-type 4H-SiC grown by sublimation method have been investigated and compared to the properties of similar structures utilizing SiO2. The electrically active defects in the structures are studied by CV method. The results show that the type as well as spatial and energy distribution of defects in Al2O3/SiC and SiO2/SiC samples are different. The structures with Al2O3 on p-type 4H-SiC demonstrate much better C-V characteristics than the p-type 4H-SiC/SiO2 structures.

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Materials Science Forum (Volumes 483-485)

Pages:

709-712

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.483-485.709

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Online since:

May 2005

Authors:

A. Paskaleva, R.R Ciechonski, Mikael Syväjärvi, E. Atanassova, Rositza Yakimova

Keywords:

Al₂O₃, High-k Dielectrics on SiC, MOS Structure

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