Paper Titles

High Temperature Reliability of SiC n-MOS Devices up to 630 °C
p.1039

High Inversion Channel Mobility of 4H-SiC MOSFETs Fabricated on C(000-1) Epitaxial Substrate with Vicinal (Below 1º) Off-Angle
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PECVD Deposited TEOS for Field-Effect Mobility Improvement in 4H-SiC MOSFETs on the (0001) and (11-20) Faces
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Process Optimisation for <11-20> 4H-SiC MOSFET Applications
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Determination of the Temperature and Field Dependence of the Interface Conductivity Mobility in 4H-SiC/SiO₂
p.1055

Modelling of the Anomalous Field-Effect Mobility Peak of O-Ta₂Si/4H-SiC High-k MOSFETs Measured in Strong Inversion
p.1059

Gamma Irradiation Effects on 4H-SiC MOS Capacitors and MOSFETs
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High Temperature Annealing Study of Al₂O₃ Deposited by ALCVD on n-Type 4H-SiC
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Experimental and First-Principles Studies of the Band Alignment at the HfO₂/4H-SiC (0001) Interface
p.1071

HomeMaterials Science ForumMaterials Science Forum Vols. 527-529Determination of the Temperature and Field...

Determination of the Temperature and Field Dependence of the Interface Conductivity Mobility in 4H-SiC/SiO₂

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Abstract:

In this work we present a comparison between the field-effect (FE) and conductivity (inv) mobilities calculated from ID-VG measurements on a 4H-SiC MOSFET. A compact device model is used to determine inv. The conductivity mobility is found to be larger than FE near room temperature, but less than FE at 500K. These results are due to a reduction in charge trapping at higher temperatures. In strong inversion, inv decreases markedly with increasing temperature. Modeling indicates that surface phonon scattering dominates in this regime.

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Silicon Carbide and Related Materials 2005

Info:

Periodical:

Materials Science Forum (Volumes 527-529)

Pages:

1055-1058

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.527-529.1055

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Online since:

October 2006

Authors:

Gary Pennington, Siddharth Potbhare, Neil Goldsman, Daniel B. Habersat, Aivars J. Lelis

Keywords:

4H-SiC MOSFET, Compact Modeling, Conductivity Mobility, Field-Effect Mobility, Surface Phonon Scattering

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© 2006 Trans Tech Publications Ltd. All Rights Reserved

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Citation:

[1] N. S. Saks: Mat. Res. Soc. Symp. Proc. Vol. 742 (2001), p.233.

[2] W. Mönch: Semiconductor Surfaces and Interfaces (Springer, Berlin 2001).

[3] S. A. Schwarz and S. E. Russek: IEEE Trans. Elect. Dev., Vol. ED-30 (1983), p.1634.