Measurements of Breakdown Field and Forward Current Stability in 3C-SiC pn Junction Diodes Grown on Step-Free 4H-SiC

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This paper reports on initial fabrication and electrical characterization of 3C-SiC p+n junction diodes grown on step-free 4H-SiC mesas. Diodes with n-blocking-layer doping ranging from ~ 2 x 1016 cm-3 to ~ 5 x 1017 cm-3 were fabricated and tested. No optimization of junction edge termination or ohmic contacts was employed. Room temperature reverse characteristics of the best devices show excellent low-leakage behavior, below previous 3C-SiC devices produced by other growth techniques, until the onset of a sharp breakdown knee. The resulting estimated breakdown field of 3C-SiC is at least twice the breakdown field of silicon, but is only around half the breakdown field of <0001> 4H-SiC for the doping range studied. Initial high current stressing of 3C diodes at 100 A/cm2 for more than 20 hours resulted in less than 50 mV change in ~ 3 V forward voltage.

Info:

Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

1335-1338

DOI:

10.4028/www.scientific.net/MSF.527-529.1335

Citation:

P. G. Neudeck et al., "Measurements of Breakdown Field and Forward Current Stability in 3C-SiC pn Junction Diodes Grown on Step-Free 4H-SiC", Materials Science Forum, Vols. 527-529, pp. 1335-1338, 2006

Online since:

October 2006

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$35.00

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