Low-Temperature Halo-Carbon Homoepitaxial Growth of 4H-SiC: Morphology, Doping, and Role of HCl Additive

Abstract:

Article Preview

Low-temperature epitaxial growth of 4H-SiC with CH3Cl carbon precursor was further developed. In-situ doping with nitrogen and aluminum was investigated. The nitrogen concentration in epitaxial layers grown on the C face was almost two orders of magnitude higher than that in the Si-face epilayers grown in the same growth run at 13000C. The opposite trend was observed for intentional aluminum doping, with more than an order of magnitude higher aluminum concentration incorporated in Si-face epilayers. High values of nitrogen and aluminum doping well in excess of 1020 cm-3 without any obvious epilayer morphology degradation can be achieved on C-face and Siface respectively. Addition of HCl during halo-carbon growth at 13000C resulted in drastic improvement of the surface morphology. Also, a significant increase of the growth rate took place confirming that the improvement in the epilayer morphology during HCl-assisted growth is predominantly related to silicon cluster etching by additional Cl-containing vapor species.

Info:

Periodical:

Materials Science Forum (Volumes 556-557)

Edited by:

N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall

Pages:

133-136

Citation:

H. D. Lin et al., "Low-Temperature Halo-Carbon Homoepitaxial Growth of 4H-SiC: Morphology, Doping, and Role of HCl Additive", Materials Science Forum, Vols. 556-557, pp. 133-136, 2007

Online since:

September 2007

Export:

Price:

$38.00

[1] Y. Koshka, H. -De Lin, G. Melnychuk, C. Wood: Mater. Sci. Forum Vols. 527-529 (2006), p.167.

[2] Y. Koshka, H. -De Lin, G. Melnychuk: accepted for publication in the J. of Crystal Growth.

[3] R. Myers, O. Kordina, Z. Shishkin, S. Rao, R. Everly, S.E. Saddow: Mater. Sci. Forum Vol. 483-485 (2005), p.73.

[4] D. Crippa, G.L. Valente, R. Ruggiero, L. Neri, et. al.: Mater. Sci. Forum Vol. 483-485 (2005), p.67.

[5] U. Forsberg, Ö. Danielsson, A. Henry, M.K. Linnarsson, E. Janzén: J. of Cryst. Growth Vol. 236 (2002), p.101.

[6] U. Forsberg, Ö. Danielsson, A. Henry, M.K. Linnarsson, E. Janzén: J. of Cryst. Growth 253 (2003), p.340.

[4] 2.

[4] 7.

[5] 2.

[5] 7.

[6] 2.

[6] 7.

[7] 2 10 20 30 40 4.

[4] 5 5.

[5] 5 6.

[6] 5 7.

[7] 5 0 5 10 15 20 25 Distance, mm HCl flow, sccm Growth rate, µm/hr Growth rate, µm/hr (a) HCl = 0 sccm (b) HCl = 10 sccm (c) HCl = 20 sccm (a) Upstream (b) Downstream Fig. 4 Role of HCl on the growth rate during CH3Cl epitaxial growth at 1300 0 C: (a) growth rate as a function of the distance from the leading edge of the wafer-carrier for three different values of HCl flow, and (b) growth rate vs HCl flow at two different locations along the gas flow direction.

DOI: https://doi.org/10.1016/0022-0248(79)90084-8