In Situ Mass Spectrometry for Chemical Identification in SiC Epitaxial Deposition

Brian H. Ponczak; James D. Oliver; Soon Cho; Gary W. Rubloff

doi:10.4028/www.scientific.net/MSF.556-557.121

Paper Titles

High SiC Growth Rate Obtained by Vapour-Liquid-Solid Mechanism
p.105

Homoepitaxial Growth of 4H-SiC Multi-Epilayers and its Application to UV Detection
p.109

Homoepitaxial Growth of Vanadium-Doped 4H-SiC Using Bis-Trimethylsilylmethane and Verrocene Precursors
p.113

Improved Mesa Designs for the Growth of Thin 4H-SiC Homoepitaxial Cantilevers
p.117

In Situ Mass Spectrometry for Chemical Identification in SiC Epitaxial Deposition
p.121

In Situ Measurement of Nitrogen during Growth of 4H-SiC by CVD
p.125

Low Trap Concentration and Low Basal-Plane Dislocation Density in 4H-SiC Epilayers Grown at High Growth Rate
p.129

Low-Temperature Halo-Carbon Homoepitaxial Growth of 4H-SiC: Morphology, Doping, and Role of HCl Additive
p.133

Optimisation of Epitaxial Layer Growth with HCl Addition by Optical and Electrical Characterization
p.137

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In Situ Mass Spectrometry for Chemical Identification in SiC Epitaxial Deposition

Abstract:

A quadrupole mass spectrometer unit was utilized to accurately detect the chemical species present inside a SiC CVD reactor growth chamber before, during, and after epitaxial deposition. The in-situ mass spectrometer has been able to confirm the presence of silane (SiH4) and propane (C3H8) decomposition products (eg. Si and CH4) that were predicted from chemical modelling, and give insight into specific reaction kinetics. Additionally, the mass spectrometer has positively detected trace amounts of oxygen, which has helped to identify process weaknesses and possible sources of vacuum leaks.