In Situ Mass Spectrometry for Chemical Identification in SiC Epitaxial Deposition

Abstract:

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A quadrupole mass spectrometer unit was utilized to accurately detect the chemical species present inside a SiC CVD reactor growth chamber before, during, and after epitaxial deposition. The in-situ mass spectrometer has been able to confirm the presence of silane (SiH4) and propane (C3H8) decomposition products (eg. Si and CH4) that were predicted from chemical modelling, and give insight into specific reaction kinetics. Additionally, the mass spectrometer has positively detected trace amounts of oxygen, which has helped to identify process weaknesses and possible sources of vacuum leaks.

Info:

Periodical:

Materials Science Forum (Volumes 556-557)

Edited by:

N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall

Pages:

121-124

DOI:

10.4028/www.scientific.net/MSF.556-557.121

Citation:

B. H. Ponczak et al., "In Situ Mass Spectrometry for Chemical Identification in SiC Epitaxial Deposition", Materials Science Forum, Vols. 556-557, pp. 121-124, 2007

Online since:

September 2007

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Price:

$35.00

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