Electrical and Structural Properties of Al-Implanted and Annealed 4H-SiC
Aluminum ions (Al+) were implanted at room temperature or at 500°C into n-type 4HSiC. The implantation damage (displaced Si atoms) and the electrical activation of Al+ ions (concentration of Al acceptors) were determined by Rutherford backscattering in channeling mode and Hall effect, respectively, as a function of the annealing temperature.
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
M. Obernhofer et al., "Electrical and Structural Properties of Al-Implanted and Annealed 4H-SiC", Materials Science Forum, Vols. 556-557, pp. 343-346, 2007