Electrical and Structural Properties of Al-Implanted and Annealed 4H-SiC

Abstract:

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Aluminum ions (Al+) were implanted at room temperature or at 500°C into n-type 4HSiC. The implantation damage (displaced Si atoms) and the electrical activation of Al+ ions (concentration of Al acceptors) were determined by Rutherford backscattering in channeling mode and Hall effect, respectively, as a function of the annealing temperature.

Info:

Periodical:

Materials Science Forum (Volumes 556-557)

Edited by:

N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall

Pages:

343-346

Citation:

M. Obernhofer et al., "Electrical and Structural Properties of Al-Implanted and Annealed 4H-SiC", Materials Science Forum, Vols. 556-557, pp. 343-346, 2007

Online since:

September 2007

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$41.00

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[2] T. Troffer, C. Peppermüller, G. Pensl, K. Rottner, A. Schöner: J. Appl. Phys. Vol. 80 (1996), p.3739.

DOI: https://doi.org/10.1063/1.363325