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Electrical and Structural Properties of Al-Implanted and Annealed 4H-SiC
Abstract:
Aluminum ions (Al+) were implanted at room temperature or at 500°C into n-type 4HSiC. The implantation damage (displaced Si atoms) and the electrical activation of Al+ ions (concentration of Al acceptors) were determined by Rutherford backscattering in channeling mode and Hall effect, respectively, as a function of the annealing temperature.
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343-346
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Online since:
September 2007
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© 2007 Trans Tech Publications Ltd. All Rights Reserved
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