Dependence of DAP Emission Properties on Impurity Concentrations in N-/B-co-doped 6H-SiC

Satoshi Murata; Yoshihiro Nakamura; Tomohiko Maeda; Yoko Shibata; Mina Ikuta; Masaaki Sugiura; Shugo Nitta; Motoaki Iwaya; Satoshi Kamiyama; Hiroshi Amano; Isamu Akasaki; Masahiro Yoshimoto; Tomoaki Furusho; Hiroyuki Kinoshita

doi:10.4028/www.scientific.net/MSF.556-557.335

Paper Titles

A Study of the D_II Defect after Electron Irradiation and Annealing of 4H SiC
p.319

Carrier Lifetime Analysis by Microwave Photoconductive Decay (μ-PCD) for 4H SiC Epitaxial Wafers
p.323

Contactless Electrical Defect Characterization and Topography of a-Plane Grown Epitaxial Layers
p.327

Deep Levels in Electron-Irradiated n- and p-type 4H-SiC Investigated by Deep Level Transient Spectroscopy
p.331

Dependence of DAP Emission Properties on Impurity Concentrations in N-/B-co-doped 6H-SiC
p.335

Determination of Impact Ionization Coefficients Measured from 4H Silicon Carbide Avalanche Photodiodes
p.339

Electrical and Structural Properties of Al-Implanted and Annealed 4H-SiC
p.343

Electrical Characterisation of 4H-SiC Epitaxial Samples Treated by Hydrogen or Helium
p.347

Electric-Field Screening Effects in the Micro-Photoluminescence Spectra of As-Grown Stacking Faults in 4H-SiC
p.351

HomeMaterials Science ForumMaterials Science Forum Vols. 556-557Dependence of DAP Emission Properties on Impurity...

Dependence of DAP Emission Properties on Impurity Concentrations in N-/B-co-doped 6H-SiC

Abstract:

The dependence of donor-acceptor pair (DAP) emission properties on impurity concentrations of N and B in 6H-SiC epilayers was investigated. Doped samples were grown by closed sublimation technique, and impurity concentrations were confirmed by secondary ion mass spectrometry (SIMS). Photoluminescence (PL) measurement results indicate that p-type 6H-SiC with NA>ND had extremely low DAP emission efficiency, whereas n-type 6H-SiC with NA

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Periodical:

Materials Science Forum (Volumes 556-557)

Pages:

335-338

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.556-557.335

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Online since:

September 2007

Authors:

Satoshi Murata, Yoshihiro Nakamura, Tomohiko Maeda, Yoko Shibata, Mina Ikuta, Masaaki Sugiura, Shugo Nitta, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki, Masahiro Yoshimoto, Tomoaki Furusho, Hiroyuki Kinoshita

Keywords:

DAP, Doping, Light Emitting Diode (LED), Optical Property, Photoluminescence (PL)

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References

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