Dependence of DAP Emission Properties on Impurity Concentrations in N-/B-co-doped 6H-SiC


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The dependence of donor-acceptor pair (DAP) emission properties on impurity concentrations of N and B in 6H-SiC epilayers was investigated. Doped samples were grown by closed sublimation technique, and impurity concentrations were confirmed by secondary ion mass spectrometry (SIMS). Photoluminescence (PL) measurement results indicate that p-type 6H-SiC with NA>ND had extremely low DAP emission efficiency, whereas n-type 6H-SiC with NA



Materials Science Forum (Volumes 556-557)

Edited by:

N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall




S. Murata et al., "Dependence of DAP Emission Properties on Impurity Concentrations in N-/B-co-doped 6H-SiC", Materials Science Forum, Vols. 556-557, pp. 335-338, 2007

Online since:

September 2007




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DOI: 10.1063/1.2195883

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