A Study of the DII Defect after Electron Irradiation and Annealing of 4H SiC

Abstract:

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The high-temperature persistent PL defect known as DII is commented on within this study, seen for the first time in low-energy electron irradiated 4H SiC. The local vibrational modes associated with the defect have been identified and the temperature dependence, spatial variation and electron-energy/electron-dose variation of this defect have all been investigated.

Info:

Periodical:

Materials Science Forum (Volumes 556-557)

Edited by:

N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall

Pages:

319-322

DOI:

10.4028/www.scientific.net/MSF.556-557.319

Citation:

W. Sullivan and J. W. Steeds, "A Study of the DII Defect after Electron Irradiation and Annealing of 4H SiC", Materials Science Forum, Vols. 556-557, pp. 319-322, 2007

Online since:

September 2007

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Price:

$35.00

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