A Study of the DII Defect after Electron Irradiation and Annealing of 4H SiC
The high-temperature persistent PL defect known as DII is commented on within this study, seen for the first time in low-energy electron irradiated 4H SiC. The local vibrational modes associated with the defect have been identified and the temperature dependence, spatial variation and electron-energy/electron-dose variation of this defect have all been investigated.
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
W. Sullivan and J. W. Steeds, "A Study of the DII Defect after Electron Irradiation and Annealing of 4H SiC", Materials Science Forum, Vols. 556-557, pp. 319-322, 2007