A Study of the DII Defect after Electron Irradiation and Annealing of 4H SiC

W. Sullivan; John W. Steeds

doi:10.4028/www.scientific.net/MSF.556-557.319

Paper Titles

XRD and Photoluminescence Whole-Wafer Mapping of 4H-SiC Wafers
p.299

XRD Characterization of the 6H-SiC Single Crystal Grown from Si-C-Ti Ternary Solution
p.303

(Nitrogen-Vacancy)-Complex Formation in SiC: Experiment and Theory
p.307

Photoluminescence Investigation of Defects Created by Electron Bombardment of 4H-SiC
p.313

A Study of the D_II Defect after Electron Irradiation and Annealing of 4H SiC
p.319

Carrier Lifetime Analysis by Microwave Photoconductive Decay (μ-PCD) for 4H SiC Epitaxial Wafers
p.323

Contactless Electrical Defect Characterization and Topography of a-Plane Grown Epitaxial Layers
p.327

Deep Levels in Electron-Irradiated n- and p-type 4H-SiC Investigated by Deep Level Transient Spectroscopy
p.331

Dependence of DAP Emission Properties on Impurity Concentrations in N-/B-co-doped 6H-SiC
p.335

HomeMaterials Science ForumMaterials Science Forum Vols. 556-557A Study of the DII Defect after Electron...

A Study of the D_II Defect after Electron Irradiation and Annealing of 4H SiC

Abstract:

The high-temperature persistent PL defect known as DII is commented on within this study, seen for the first time in low-energy electron irradiated 4H SiC. The local vibrational modes associated with the defect have been identified and the temperature dependence, spatial variation and electron-energy/electron-dose variation of this defect have all been investigated.