Intrinsic Defects in Semi-Insulating SiC: Deep Levels and their Roles in Carrier Compensation

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Vacancies, divacancies and carbon vacancy-carbon antisite pairs are found by electron paramagnetic resonance (EPR) to be dominant defects in high-purity semi-insulating (HPSI) 4HSiC substrates having different thermal activation energies of the resistivity ranging from ~0.8 eV to ~1.6 eV. Based on EPR results and previously reported data, the energy positions of several acceptor states of the vacancies and vacancy-related complexes are estimated. These deep levels are suggested to be associated to different thermal activation energies and responsible for the semiinsulating behaviour in HPSI SiC substrates. Their role in carrier compensation is discussed.

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Periodical:

Materials Science Forum (Volumes 556-557)

Edited by:

N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall

Pages:

465-468

Citation:

N. T. Son et al., "Intrinsic Defects in Semi-Insulating SiC: Deep Levels and their Roles in Carrier Compensation", Materials Science Forum, Vols. 556-557, pp. 465-468, 2007

Online since:

September 2007

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$38.00

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