Novel Use of Columnar Porous Silicon Carbide Structures as Nanoimprint Lithography Stamps

J.H. Leach; Hadis Morkoç; Yue Ke; Robert P. Devaty; Wolfgang J. Choyke

doi:10.4028/www.scientific.net/MSF.600-603.871

Paper Titles

Characterization of Electric Discharge Machining for Silicon Carbide Single Crystal
p.855

A Silicon Carbide Accelerometer for Extreme Environment Applications
p.859

An Examination of Material-Related Performance in SiC Heated Elements for IR Emitter and Sensor Applications
p.863

Mechanical Properties of Poly 3C-SiC Thin Films According to Carrier Gas (H₂) Concentration
p.867

Novel Use of Columnar Porous Silicon Carbide Structures as Nanoimprint Lithography Stamps
p.871

Etching Characteristics of Polycrystalline 3C-SiC Films Using Enhanced RIE
p.875

Femtosecond Laser-Induced Surface Patterning on 4H-SiC
p.879

Cross-Sectional TEM Analysis of Structural Change in 4H-SiC Single Crystal Irradiated by Femtosecond Laser Pulses
p.883

Present Status and Future Prospects for Electronics in EVs/HEVs and Expectations for Wide Bandgap Semiconductor Devices
p.889

HomeMaterials Science ForumMaterials Science Forum Vols. 600-603Novel Use of Columnar Porous Silicon Carbide...

Novel Use of Columnar Porous Silicon Carbide Structures as Nanoimprint Lithography Stamps

Abstract:

Columnar porous Si-face 6H-SiC substrates were prepared by a photo-electrochemical etching method and applied as nanoimprint lithography (NIL) stamps. The diameter of the pores in the porous region was about 20 nm and the center-to-center separation between pores was about 60 nm. The columnar porous SiC substrates were subjected to a vapor phase silanization treatment whereby a monolayer of perfluorooctyltrichlorosilane (FOTS) was deposited in order to keep the stamps from sticking to the substrates during the imprint step. Subsequently, the porous SiC stamps were used to imprint polymethylmethacrylate (PMMA) at elevated temperatures and pressures. The imprinted PMMA could then be used to transfer the nanopattern on the columnar porous SiC to other substrates for various purposes; e.g. templates for GaN regrowth, catalysts for nanowire growth by vapor-liquid-solid type methods (VLS), etc. SiC is not typically used for NIL stamps since etch processing of SiC is less mature than that of Si. However, as demonstrated here, there is no reason why SiC cannot be used as a material for NIL stamps. The superior mechanical properties to Si make the use of SiC alluring as a master template for NIL processing.