An Examination of Material-Related Performance in SiC Heated Elements for IR Emitter and Sensor Applications

Li  Chen; Mehran  Mehregany

doi:10.4028/www.scientific.net/MSF.600-603.863

Paper Titles

Temperature Dependence of Plasma Chemical Vaporization Machining of Silicon and Silicon Carbide
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Electric Discharge Machining for Silicon Carbide and Related Materials
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Characterization of Electric Discharge Machining for Silicon Carbide Single Crystal
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A Silicon Carbide Accelerometer for Extreme Environment Applications
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An Examination of Material-Related Performance in SiC Heated Elements for IR Emitter and Sensor Applications
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Mechanical Properties of Poly 3C-SiC Thin Films According to Carrier Gas (H₂) Concentration
p.867

Novel Use of Columnar Porous Silicon Carbide Structures as Nanoimprint Lithography Stamps
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Etching Characteristics of Polycrystalline 3C-SiC Films Using Enhanced RIE
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Femtosecond Laser-Induced Surface Patterning on 4H-SiC
p.879

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An Examination of Material-Related Performance in SiC Heated Elements for IR Emitter and Sensor Applications

Abstract:

Micro-hotplate platforms, including the heating and sensing resistors, are fabricated by surface micromachining techniques from nitrogen-doped, polycrystalline SiC films deposited by low-pressure chemical vapor deposition. The resulting heated elements are operated without the need for metal electrodes. For comparison, platinum is also used as the heating/sensing resistor on top of otherwise similar SiC micro-hotplates. After characterizing the fundamental thermal transient response of the resulting micro-hotplates, accelerated aging tests are carried out by increasing the input power until the heating resistors fail. Material-related kinetic degradation analysis is conducted to estimate the life time of such elements as infrared emitters.