Optical-Electrical Properties and Corrosion Behavior of Tantalum-Doped Indium Tin Oxide Films Deposited by Magnetron Sputtering

Abstract:

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Tantalum-doped indium tin oxide films were deposited on glass substrate by co-sputtering with two-targets. Tantalum-doping strengthened the orientation of the (400) plane and resulted in better crystalline structure, larger grain size and lower surface roughness. Due to the better crystallizability of the tantalum-doping films, carrier concentration and the mobility were increased. Tantalum-doping revealed better optical–electrical properties. The environmental effects on electrical properties stability and long-term reliability of tantalum-doped films in NaCl, Na2SO4 and HCl solutions at 25°C were also investigated, which simulated corrosion behavior in marine, industrial and acidic environments. The relative resistance change (△R/R) for tantalum-doped films revealed that the films had the best electrical properties stability and long-term reliability in these aggressive environments. The pre-formation of a protective oxide layer on the surface of the films had an enhancing effect on the corrosion properties.

Info:

Periodical:

Materials Science Forum (Volumes 638-642)

Main Theme:

Edited by:

T. Chandra, N. Wanderka, W. Reimers , M. Ionescu

Pages:

2897-2902

DOI:

10.4028/www.scientific.net/MSF.638-642.2897

Citation:

X. P. Dong et al., "Optical-Electrical Properties and Corrosion Behavior of Tantalum-Doped Indium Tin Oxide Films Deposited by Magnetron Sputtering", Materials Science Forum, Vols. 638-642, pp. 2897-2902, 2010

Online since:

January 2010

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$35.00

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