High-Speed Growth of High-Quality 4H-SiC Bulk by Solution Growth Using Si-Cr Based Melt

Katsunori Danno; Hiroaki Saitoh; Akinori Seki; H. Daikoku; Y. Fujiwara; T. Ishii; H. Sakamoto; Yoichiro Kawai

doi:10.4028/www.scientific.net/MSF.645-648.13

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Preface

High Quality 100mm 4H-SiC Substrates with Low Resistivity
p.3

Growth and Characterization of Large-Diameter 4H-SiC Crystals with High Crystal Quality
p.9

High-Speed Growth of High-Quality 4H-SiC Bulk by Solution Growth Using Si-Cr Based Melt
p.13

Growth of 4H-SiC Crystals on the 8° Off-Axis 6H-SiC Seed by PVT Method
p.17

Characterization of Vanadium Doped 4H- and 6H-SiC Grown by PVT Method Using the Open Seed Backside
p.21

Status of 3" 6H SiC Bulk Crystal Growth
p.25

Observation of Lattice Plane Bending during SiC PVT Bulk Growth Using In Situ High Energy X-Ray Diffraction
p.29

HomeMaterials Science ForumMaterials Science Forum Vols. 645-648High-Speed Growth of High-Quality 4H-SiC Bulk by...

High-Speed Growth of High-Quality 4H-SiC Bulk by Solution Growth Using Si-Cr Based Melt

Abstract:

High-speed solution growth using Si-Cr based melt has been performed on on-axis 4H-SiC(0001) at a high temperature of about 2000°C. The maximum growth rate for one-hour growth reaches to 1120 m/h, while the typical growth rate of growth for 2h is about 500 m/h. A large crystal that is about 25 mm in diameter and 1650 m in thickness can be obtained by growth for 5h. The crystal quality is confirmed to be homogeneous by X-ray diffraction and X-ray topography, because FWHM is less than 30 arcsec. Etch pit density of the threading dislocations in the grown crystal is 103-104 cm-2, and that of basal plane dislocation is 2×102-3×103 cm-2. Resistivity of the crystals grown by the solution growth is comparable to those of crystals grown by physical vapor transport technique.

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Materials Science Forum (Volumes 645-648)

Pages:

13-16

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.645-648.13

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Online since:

April 2010

Authors:

Katsunori Danno, Hiroaki Saitoh, Akinori Seki, H. Daikoku, Y. Fujiwara, T. Ishii, H. Sakamoto, Yoichiro Kawai

Keywords:

Bulk Crystal Growth, Liquid Phase Epitaxy (LPE)

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References

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