High-Speed Growth of High-Quality 4H-SiC Bulk by Solution Growth Using Si-Cr Based Melt
High-speed solution growth using Si-Cr based melt has been performed on on-axis 4H-SiC(0001) at a high temperature of about 2000°C. The maximum growth rate for one-hour growth reaches to 1120 m/h, while the typical growth rate of growth for 2h is about 500 m/h. A large crystal that is about 25 mm in diameter and 1650 m in thickness can be obtained by growth for 5h. The crystal quality is confirmed to be homogeneous by X-ray diffraction and X-ray topography, because FWHM is less than 30 arcsec. Etch pit density of the threading dislocations in the grown crystal is 103-104 cm-2, and that of basal plane dislocation is 2×102-3×103 cm-2. Resistivity of the crystals grown by the solution growth is comparable to those of crystals grown by physical vapor transport technique.
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
K. Danno et al., "High-Speed Growth of High-Quality 4H-SiC Bulk by Solution Growth Using Si-Cr Based Melt", Materials Science Forum, Vols. 645-648, pp. 13-16, 2010